关键词: 互补金属氧化物半导体, 集成电路, 动态闩锁

Abstract: The latch-up effect will occurs in CMOS device, there are currently some relevant standards domestic and overseas to detect the latch-up resistance of integrated circuit, but most IC latch experiments are conducted under static operation of the circuit. This paper studies the dynamic latch-up capability of integrated circuits based on the relevant test standards and the dynamic working conditions of typical integrated circuits.

Key words: CMOS, integrated circuits, dynamic latch-up