关键词: 栅氧, 栅致漏极泄漏, Halo, LDD, RTA

Abstract: The gate-induced drain leakage(GIDL) current is increased exponentially with the reduction of the gate insulator thickness. While process enters into the ultra deep sub-micro nodes, the thickness of Gate-oxide thickness is about less than 2 nm, and the short channel device’s GIDL effect is enhanced. This paper investigates the related process factors affecting GIDL effect, discovering the major concern of GIDL current. Process experiment and simulation results all improve that Halo implant process is bigger influence more than other process step, and reducing Halo implant dose is the better process improving method.

Key words: Gate-oxide, GIDL, Halo, LDD, RTA