关键词: P型InGaAs, 界面空洞, 合金温度, 扩散, 膜层厚度

Abstract: The contact morphology of P-InGaAs and metal was analyzed. Different thickness metal films were deposited on P-InGaAs by magnetron sputtering, and alloyed at different temperatures. Alloying temperature and thickness of film were analyzed. Scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to characterize the contact morphology, the results show that the voids is directly to alloy temperature. When alloying is under 350 ℃, the voids will not appear, otherwise, the voids will appear gradually，and the density of voids will increase with the increase of the temperature. The diffusion between metal films and contact resistivity are related to the thickness Ti and Pt. By optimizing the alloying and thickness of metal film, the contact morphology between semiconductor and metal is improved, the interface between metals is clear without diffusion, and decrease the specific contact resistivity and failure-instance/time(FIT) of devices.

Key words: P-InGaAs, voids of interface, alloying temperature, diffusion, film thickness