4H-SiC基FinFET器件的单粒子瞬态效应研究*

doi:10.16257/j.cnki.1681-1070.2022.1108

电子与封装 ›› 2022, Vol. 22 ›› Issue (11): 110401 . doi: 10.16257/j.cnki.1681-1070.2022.1108

4H-SiC基FinFET器件的单粒子瞬态效应研究^*

刘保军¹;杨晓阔²;陈名华¹

1. 空军工程大学航空机务士官学校，河南信阳 464000; 2.空军工程大学基础部，西安 710051

收稿日期:2022-05-16 出版日期:2022-11-29 发布日期:2022-07-06
作者简介:刘保军（1984—），男，山西灵丘人，博士，副教授，研究方向为微纳电路与系统，战伤抢修。

Research on Single Event Transient Effect of 4H-SiC Based FinFET Device

LIU Baojun¹, YANG Xiaokuo², CHEN Minghua¹

1. Aviation Maintenance NCO Academy, Air Force Engineering University, Xinyang 464000, China; 2. FundamentalsDepartment, Air Force EngineeringUniversity, Xi’an 710051, China

Received:2022-05-16 Online:2022-11-29 Published:2022-07-06

摘要/Abstract

摘要： 深入分析新结构、新材料的单粒子瞬态（SET）效应机理是开展抗辐射加固设计的基础和前提。基于Si基14 nm SOI FinFET器件，构建了4H-SiC基的SET仿真模型。对比分析了不同Fin材料、不同粒子能量对4H-SiC基FinFET器件SET的影响机理。结果表明，与Si材料相比，4H-SiC材料具有宽禁带和较高复合率的优点，在高能粒子入射时形成的SET脉冲更小，其瞬态电流峰值、收集电荷量相对Si材料分别下降了79.64%和83.35%，且随着粒子能量的增加，2者与Si材料的差值均呈幂指数增加。

关键词: 单粒子瞬态, FinFET器件, 4H-SiC, 抗辐射

Abstract: In-depth analysis of the effect mechanism of single event transient (SET) of new structure and new material is the basis and premise for radiation hardening design of circuits. Based on Si SOI FinFET device at 14 nm technology node, the simulation model of SET of 4H-SiC FinFET is presented. The effects mechanism of different Fin materials and particle energies on SET of 4H-SiC based FinFET devices is analyzed. The results show that compared with the devices of Si material, 4H-SiC composite material has wider band gap and higher recombination rate, and the SET pulse formed by the energetic particle hitting is weaker. The peak value of transient current and collection charge are decreased by 79.64% and 83.35% respectively. With the increase of the particle energy, the differences of transient current peak value and collection charge between Si and 4H-SiC increase exponentially.

Key words: single event transient, FinFET device, 4H-SiC, radiation resistance

中图分类号:

TN406
TN432

刘保军;杨晓阔;陈名华. 4H-SiC基FinFET器件的单粒子瞬态效应研究^*[J]. 电子与封装, 2022, 22(11): 110401 .

LIU Baojun, YANG Xiaokuo, CHEN Minghua. Research on Single Event Transient Effect of 4H-SiC Based FinFET Device[J]. Electronics & Packaging, 2022, 22(11): 110401 .

参考文献

[1] Semiconductor Industry Association. International technology roadmap for semiconductors (ITRS) 2013 edition[EB/OL]. http://www.itrs.net/Links/2013ITRS/Home2013.htm, 2013.
[2] LIU B J, CAI L. Model and analysis of single event transient sensitivity based on uncertainty quantification[J]. Microprocessors and Microsystems, 2022, 90: 104518.
[3] 陈伟，杨海亮，郭晓强，等. 空间辐射物理及应用研究现状与挑战[J]. 科学通报, 2017, 62(10): 978-989.
[4] NILAMANI S, RAMAKRISHNAN V N. Gate and drain SEU sensitivity of sub-20-nm FinFET and junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation[J]. Journal of Computer Electron, 2017, 16(1): 74-82.
[5] 刘忠永，蔡理，刘保军，等. 晶圆各向异性对4H-SiC基VDMOSFET单粒子效应的影响[J]. 固体电子学研究与进展，2017, 37(4): 234-238.
[6] 刘忠永，蔡理，刘保军，等. 4H-SiC基半超结VDMOSFET单粒子烧毁效应[J]. 空军工程大学学报（自然科学版），2018, 19(3): 95-100.
[7] LU J, LIU J, TIAN X, et al. Impact of varied buffer layer designs on single-event response of 1.2-kV SiC power MOSFETs[J]. IEEE Transactions on Electron Devices, 2020, 67(9): 3698-3704.
[8] 于庆奎，曹爽，张洪伟，等. SiC器件单粒子效应敏感性分析[J]. 原子能科学技术，2019, 53(10): 2114-2119.
[9] MCPHERSON J A, KOWAL P J, PANDEY G K, et al. Heavy ion transport modeling for single-event burnout in SiC-based power devices[J]. IEEE Transactions on Nuclear Science, 2019, 66(1): 474-481.
[10] AKTURK A, WILKINS R, MCGARRITY J, et al. Single event effects in Si and SiC power MOSFETs due to terrestrial neutrons[J]. IEEE Transactions on Nuclear Science, 2017, 64(1): 529-535.
[11] 张鸿，郭红霞，潘霄宇，等. 重离子在碳化硅中的输运过程及能量损失[J]. 物理学报，2021, 70(6): 162401.
[12] ZHANG H, GUO H X, ZHANG F Q, et al. Study on proton-induced single event effect of SiC diode and MOSFET[J]. Microelectronics Reliability, 2021, 124: 114329.
[13] 尚也淳. SiC材料和器件特性及其辐照效应的研究[D]. 西安：西安电子科技大学，2001.
[14] 刘保军, 张爽, 李闯. 14 nm SOI FinFET器件单粒子瞬态的复合双指数电流源模型[J]. 固体电子学研究与进展, 2022, 42(2): 93-98.
[15] 上官士鹏. 新材料器件单粒子效应脉冲激光模拟试验研究[D]. 北京：中国科学院大学，2020.
[16] SAHA R, BHOWMICK B, BAISHYA S. GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter[J]. International Journal of Nanoparticles, 2018, 10(1/2): 3-14.
[17] DUBEY A, NARANG R, SAXENA M, et al. Investigation of single event transient effects in junctionless accumulation mode MOSFET[J]. IEEE Transactions on Device and Materials Reliability, 2020, 20(3): 604-608.
[18] 周威. GaAs HBT单粒子效应的研究[D]. 西安：西安电子科技大学，2014.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

4H-SiC基FinFET器件的单粒子瞬态效应研究^*

Research on Single Event Transient Effect of 4H-SiC Based FinFET Device

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 11

编辑推荐

Metrics

本文评价

[1]	殷亚楠;王玧真;邱一武;周昕杰;郭刚. 纳米器件单粒子瞬态仿真研究^*[J]. 电子与封装, 2022, 22(7): 70404-.
[2]	程琳;罗佳敏;龚存昊;张有润;唐毅;门富媛;都小利. 10 kV SiC GTO器件特性研究^*[J]. 电子与封装, 2022, 22(3): 30102-.
[3]	马艺珂;汪逸垚;姚进;花正勇;殷亚楠;周昕杰;颜元凯. 一种抗辐射LVDS驱动电路IP设计^*[J]. 电子与封装, 2022, 22(2): 20306-.
[4]	姚进, 周晓彬, 左玲玲, 周昕杰. 基于0.18 μm CMOS加固工艺的抗辐射设计[J]. 电子与封装, 2022, 22(1): 10401-0.
[5]	姚进;左玲玲;周晓彬;刘谆;周昕杰. 基于0.18 μm加固工艺的抗辐射单元库开发[J]. 电子与封装, 2021, 21(8): 80303-.
[6]	李燕妃，朱少立，吴建伟，徐　政，洪根深. 抗辐射高压SOI NMOS器件的背栅效应研究[J]. 电子与封装, 2019, 19(2): 38-41.
[7]	曹　靓, 田海燕, 王　栋. 一种抗单粒子瞬态辐射效应的自刷新三模冗余触发器设计[J]. 电子与封装, 2018, 18(9): 36-38.
[8]	李燕妃，吴建伟，顾　祥，洪根深. 30 V NLDMOS结构优化及SEB能力提高[J]. 电子与封装, 2018, 18(10): 36-39.
[9]	曹靓，王文，封晴. 一种带自刷新功能的三模冗余触发器设计[J]. 电子与封装, 2017, 17(7): 25-27.
[10]	胡永强，周　源. 基于SKILL语言的参数化抗辐射器件版图设计[J]. 电子与封装, 2016, 16(9): 31-34.
[11]	陈嘉鹏，蔡洁明，黄旭东，宋国栋. 宇航元器件在轨测试研究[J]. 电子与封装, 2016, 16(4): 13-17.