关键词: TCAD, 抗辐射加固, 单粒子烧毁, P型埋层, LDMOS

Abstract: With the development of space and nuclear technology, there are more and more advanced semiconductor devices applied to the electronic system of military and space environment. A radiation-harden n-type LDMOS (NLDMOS) device is designed by the TCAD simulator, as well as the study of single event burnout (SEB) effect. SEB occurs when the parasitic BJT is put into a self-sustaining forward active operating mode as a result of high photocurrent. The layout and process methods are considered to enhance the structure hardened against SEB effect, including the concentration and length of LDD regions, p-type buried layer, operating voltage, LET energy, and so on. Based on the radiation hardened design and process, a NLDMOS device is acquired with the breakdown voltage of 34.6 V and specific on-resistance of 10.04 mΩ?mm2. As a result, the n-type LDMOS device achieves a LET threshold of 100 MeV?cm2/mg with a 30 V operating voltage.

Key words: TCAD, radiation hardened, single event burnout, P-type buried layer, LDMOS