关键词: 高压驱动器, 电源调制, PMOS, 抗辐射加固, 高压BCD工艺

Abstract: With the development of space-borne radar technology, the transmitting power of transmitter and receiver（T/R）module system is getting higher and higher. The high-voltage modulation driver, matched with the power switch PMOS, is used as the power modulation driver of the high-power GaN power amplifier in the T/R module, which greatly improves the integration and reliability of the T/R module. A high-voltage modulation driver working at 32V is introduced, which is designed and fabricated based on high-voltage BCD process. In the design, techniques of selecting appropriate high-voltage structure and device working voltage, optimizing logic structure, layout device isolation and wiring are used to strengthen the radiation resistance. After verification, the product achieves the total dose index of 100 krad(Si) and the single event index of 75MeV·cm²/mg.

Key words: high-voltage driver, power modulation, PMOS, radiation-resistant strengthening, high-voltage BCD process