GaN HEMT热阻测试技术研究

doi:10.16257/j.cnki.1681-1070.2023.0163

电子与封装 ›› 2023, Vol. 23 ›› Issue (11): 110104 . doi: 10.16257/j.cnki.1681-1070.2023.0163

所属专题： ICTC 2023(集成电路测试大会)

• ICTC 2023(集成电路测试大会)专题 • 上一篇下一篇

GaN HEMT热阻测试技术研究

邱金朋,沈竞宇

华润微电子重庆有限公司，重庆 404100

收稿日期:2023-09-06 出版日期:2023-11-28 发布日期:2023-11-28
作者简介:邱金朋（1994—），男，山东德州人，本科，工程师，主要研究方向为GaN HEMT功率器件测试、可靠性。

Research on Thermal ResistanceTesting Technology of GaN HEMT

QIU Jinpeng, SHEN Jingyu

China Resources Microelectronics Chongqing Co., Ltd.,Chongqing 404100, China

Received:2023-09-06 Online:2023-11-28 Published:2023-11-28

摘要/Abstract

摘要： GaN作为第三代半导体材料的代表，具有优越的电学性能，被应用在诸多领域。随着功率密度提升、工作频率增加，GaN器件会产生明显的热效应，温度对GaN的性能及可靠性有直接影响，因此热阻测试及结温表征是非常重要的。根据GaN器件的结构、工作原理以及特性参数，结合JEDEC热阻测试的标准，对不同电压等级、不同封装结构的GaN器件进行测试，验证了使用导通电阻作为温度敏感参数的热阻测试方法的正确性。

关键词: GaN, 导通电阻, 结温, 热阻

Abstract: As the representative of the third generation semiconductormaterials, GaN has excellent electrical properties and isused in many fields.With the increase of power density and working frequency, GaN devices will produce obvious thermal effects, and the temperature has a direct impact on the performance and reliability of GaN, so it is very important to test the thermal resistance and characterize the junction temperature.According to the structure, working principle and characteristic parameters of GaN devices, combined with standards of JEDEC thermal resistance test, the correctness of the thermal resistance test method using on-resistance as the temperature sensitive parameter is verified by testing GaN devices with different voltage levels and different package structures.

Key words: GaN, on-resistance, junctiontemperature, thermalresistance

中图分类号:

TN307

邱金朋, 沈竞宇. GaN HEMT热阻测试技术研究[J]. 电子与封装, 2023, 23(11): 110104 .

QIU Jinpeng, SHEN Jingyu. Research on Thermal ResistanceTesting Technology of GaN HEMT[J]. Electronics & Packaging, 2023, 23(11): 110104 .

参考文献

[1] BYKHOVSKI A, GELMONT B, SHUR M. The influence of the strain induced electric field on the charge distribution in GaN-AlN-GaN structure[J].Journal of Applied Physics, 1993,74(11): 6734-6739.
[2] YU E T, SULLIVAN G J, ASBECK P M. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors[J].Applied Physics Letters,1997, 71(19):2794-2796.
[3] ASBECK P M, YU E T, SULLIVAN G J, et al. Piezoelectric charge densities in AlGaN/GaN HFETs[J]. Applied Physics Letters, 1997, 71(19): 2794-2796.
[4] LANFORD W B. Recessed‐gate enhancement‐mode GaN HEMT with high threshold voltage[J].ElectronLetters,2005, 41 (7): 449-450.
[5] CAI Y, ZHOU Y, LAU KM, et al. Control of threshold voltage ofAlGaN/GaN HEMTs by fluoride‐based plasma treatment: from depletion‐mode toenhancement‐mode[J]. IEEE Transactions on Electron Devices,2006, 53(9): 2207-2215.
[6] DAVIS S. Enhancement‐mode GaN MOSFET delivers impressive performance[J].Power Electronics Technology,2010, 36(3): 10-13.
[7]HU X, SIMIN G, YANGJ, et al. Enhancement‐mode AIGaN/GaN HFET withselectively grown pn junction gate[J].Electronics Letters,2000,36(8): 753-754.
[8]Joint Electron Device Engineering Council. Implementation of the electrical test method for the measurement of real thermal resistance and impedance of light-emitting diodes with exposed cooling surface: JESD51-51A [S].USA, 2022.
[9] 丁晓明，王佃利，李相光，等. 微波脉冲功率器件瞬态热阻测试研究[J]. 固体电子学研究与进展，2012,32(1):54-57.
[10] 郭春生，李世伟，任云翔，等. 加载功率与壳温对AlGaN/GaN高速电子迁移率晶体管器件热阻的影响[J]. 物理学报，2016,65(7):273-278.
[11] MARTIN K, JAMES W P. A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution[J].IEEE Transactions on Device and Materials Reliability,2016,16(4):667-684.
[12]KAZUAKI Y, DUSTIN K, JUSTIN R, et al. Intrinsic transient thermal response of GaN HEMT[C]// 2016 IEEE MTTS International Microwave Symposium,2016:1-3.
[13] HUARUI S, JAMES W P, ROLAND B S,et al. Temperature-dependent thermal resistance of GaN-on-diamond HEMT wafers[J]. IEEE Electron Device Letters,2016,37(5):621-624.
[14]吕晓瑞，刘建松，黄颖卓，等. 基于热测试芯片的2.5D封装热阻测试技术研究[J]. 电子与封装,2023, 23(4): 040202.
[15] LIU QZ,LAU SS. A review of the metal-GaN contact technology[J].Solid-State Electronics,1998, 42(5): 677-691.
[16] SZE SM, MATTIS DC. Physics of semiconductor devices[M]. Hoboken: Wiley, 1981.
[17] LIDOW A, ROOIJ M, STRYDOM J, et al.氮化镓功率晶体管：器件、电路与应用[M].段宝兴，杨银堂，等译. 北京：机械工业出版社，2018: 22-24.
[18]孙明，任翔. 氮化镓高速电子迁移率晶体管双界面热阻测试[J].国外电子测量技术,2017, 36(11): 67-70.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN HEMT热阻测试技术研究

Research on Thermal ResistanceTesting Technology of GaN HEMT

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	刘健,张长城,崔朝探,李天赐,杜鹏搏,曲韩宾. 2~6 GHz小型化、高效率GaN功率放大器[J]. 电子与封装, 2023, 23(9): 90402-.
[2]	石浩,王雯洁,付登源,梁宗文,王溯源,张良,章军云. 一种用于生产的GaN HEMT器件空气桥的设计[J]. 电子与封装, 2023, 23(9): 90403-.
[3]	鄂依阳;田兆波;迟克禹;江仁要;孙琪;吕尤;祝渊. 封装用环氧银胶的配制工艺及性能研究[J]. 电子与封装, 2023, 23(7): 70207-.
[4]	袁海龙;袁毅凯;詹洪桂;成年斌;汤勇. 焊接空洞对功率器件可靠性的影响与调控^*[J]. 电子与封装, 2023, 23(6): 60203-.
[5]	张黎莉;邱一武;殷亚楠;王韬;周昕杰. 一种高温度稳定性的GaN基准电压源设计^*[J]. 电子与封装, 2023, 23(5): 50304-.
[6]	吕晓瑞;刘建松;黄颖卓;林鹏荣. 基于热测试芯片的2.5D封装热阻测试技术研究[J]. 电子与封装, 2023, 23(4): 40202-.
[7]	郑俊娜;王党会;许天旱. 生长在图形化蓝宝石衬底上的GaN薄膜光学性质研究[J]. 电子与封装, 2023, 23(4): 40403-.
[8]	张彤;刘树强;何亮;成绍恒;李柳暗;敖金平. GaN基互补型逻辑电路的研究进展及挑战^*[J]. 电子与封装, 2023, 23(1): 10101-.
[9]	秦尧;明鑫;叶自凯;庄春旺;张波. GaN HEMT及GaN栅驱动电路在DToF激光雷达中的应用^*[J]. 电子与封装, 2023, 23(1): 10103-.
[10]	黄森, 张寒, 郭富强, 王鑫华, 蒋其梦, 魏珂, 刘新宇. 面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件^*[J]. 电子与封装, 2023, 23(1): 10102-.
[11]	黄火林;孙楠. GaN基增强型HEMT器件的研究进展^*[J]. 电子与封装, 2023, 23(1): 10108-.
[12]	张峰, 张国良. 宽禁带半导体碳化硅IGBT器件研究进展与前瞻^*[J]. 电子与封装, 2023, 23(1): 10109-.
[13]	周淼, 汤亮, 何逸涛, 陈辰, 周锌. 一种部分超结型薄层SOI LIGBT器件的研究^*[J]. 电子与封装, 2022, 22(9): 90403-.
[14]	匡维哲;周琦;陈佳瑞;杨凯;张波. 自热效应下P-GaN HEMT的阈值漂移机理^*[J]. 电子与封装, 2022, 22(8): 80401-.
[15]	邱一武;吴伟林;颜元凯;周昕杰;黄伟. ⁶⁰Co γ射线对增强型GaN HEMT直流特性的影响[J]. 电子与封装, 2022, 22(7): 70401-.