中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2022, Vol. 22 ›› Issue (2): 020306 . doi: 10.16257/j.cnki.1681-1070.2022.0208

• 电路与系统 • 上一篇    下一篇

一种抗辐射LVDS驱动电路IP设计*

马艺珂;汪逸垚;姚 进;花正勇;殷亚楠;周昕杰;颜元凯   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡? 214035
  • 收稿日期:2021-11-01 出版日期:2022-02-23 发布日期:2022-01-24
  • 作者简介:马艺珂(1991—),男,江苏无锡人,硕士,工程师,研究方向为模拟集成电路的设计与ESD防护。

IP Design of Anti-Radiation LVDS Driving Circuit

MA Yike, WANG Yiyao, YAO Jin, HUA Zhengyong, YIN Yanan, ZHOU Xinjie, YAN Yuankai   

  1. ChinaElectronics Technology Group Corporation No. 58ResearchInstitute, Wuxi 214035,China
  • Received:2021-11-01 Online:2022-02-23 Published:2022-01-24

摘要: 低压差分信号(Low Voltage Differential Signaling,LVDS)在航天通讯领域有着广泛的应用,为解决LVDS驱动器电路在宇宙辐射环境中的单粒子闩锁和总剂量问题,给出了低成本抗辐射解决方案,提出了一种改进结构的抗辐射加固技术,不仅解决了现有工艺下带隙基准电路的温漂问题,而且还可以利用设计的抗辐射单元库来满足抗辐射加固要求,简化了电路设计。基于0.18 μm CMOS工艺模型库,利用Hspice进行仿真,该电路传输速率达到400 Mb/s,具有抗单粒子特性,满足航空航天领域对抗辐射LVDS驱动电路的使用要求。

关键词: LVDS, 驱动器电路, 单粒子闩锁, 总剂量, 抗辐射加固, 温漂问题

Abstract: Low-voltage differential signals (LVDS) are widely used in the field of aerospace communication. In order to solve the single-event latch-up and total dose problems of the LVDS driver circuit in the cosmic radiation environment, a low-cost anti-radiation solution is provided, and an improved structure and anti-radiation solution are proposed. The radiation hardening technology not only can solve the temperature drift problem of the band gap reference circuit under the existing technology, but also can use the designed anti-radiation unit library to meet the anti-radiation hardening requirements, simplifying the circuit design. Based on the 0.18 μm CMOS process model library and simulated by Hspice, the circuit has a transmission rate of 400 Mb/s, and has anti-single event characteristics, which meets the requirements of radiation-resistant LVDS drive circuits in the aerospace field requirements.

Key words: LVDS, drivercircuit, singleeventlatch-up, totaldose, radiationhardening, temperaturedriftproblem

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