一种低噪声前置放大器的电路设计

doi:10.16257/j.cnki.1681-1070.2017.0059

电子与封装 ›› 2017, Vol. 17 ›› Issue (5): 24 -27. doi: 10.16257/j.cnki.1681-1070.2017.0059

一种低噪声前置放大器的电路设计

王彬¹，李健²，肖姿逸¹

1.中国电子科技集团公司第58研究所，江苏无锡214072；2.江南大学，江苏无锡214122

收稿日期:2016-12-25 出版日期:2017-05-19 发布日期:2017-05-19
作者简介:王彬（1982—），男，吉林省吉林市人，硕士学历，工程师，主要研究方向为直流开关电源、交流开关电源、防雷击设计、电磁兼容等。

Design of a Low Noise Preamplifier

WANG Bin¹,LI Jian²,XIAO Ziyi¹

1.China Electronic Technology Group Corporation No.58 Research Institute,Wuxi 214072,China；2.Jiangnan University,Wuxi 214122,China

Received:2016-12-25 Online:2017-05-19 Published:2017-05-19

摘要/Abstract

摘要： 采用EMI滤波和斩波技术，基于CSMC ST2000 PDK工艺，设计了一种低噪声、输出范围广、建立时间快、增益高的前置放大器电路，并利用MATLAB工具进行了系统验证。结果表明，该前置放大器的单位增益带宽超过了10 MHz，相位裕度达到了66 dB，满足了预定的设计要求。

关键词: 低噪声, 斩波技术, 快速建立

Abstract: In the paper,a preamplifier of CSMC ST2000 PDK process featuring low-noise,wide output range, fast setting up and high gain is designed using EMI filtering and chopping technology.The preamplifier system is verified by MATLAB.The unit gain bandwidth of the preamplifier exceeds 10 MHz,and phase margin reaches 66 dB,thereby meeting the expectation.

Key words: low noise, chopping technology, fastsetting up

中图分类号:

TN402

王彬，李健，肖姿逸. 一种低噪声前置放大器的电路设计[J]. 电子与封装, 2017, 17(5): 24 -27.

WANG Bin,LI Jian,XIAO Ziyi. Design of a Low Noise Preamplifier[J]. Electronics & Packaging, 2017, 17(5): 24 -27.

参考文献

[1]OSIPOV D L.Micropower preamplifier for comparators of precision ADCs[J].Russian Microelectronics,2015,44(2): 127-131.
[2]SONG Zheng,WANG Shishan,BOR-LIN Li,et al..The application of multi-stage EMI filter design method in planar EMI filter[C].Asia-Pacific Symposium on Electromagnetic Compatibility(APEMC),Taipei,Taiwan,2015:140-143.
[3]YU Zhenyang,WANG Shishan,SONG Zheng,et al.The reviews of integrated EMI filters applied in power electronic system[C].Asia-Pacific Symposium on Electromagnetic Compatibility(APEMC),Taipei,Taiwan,2015:227-230.
[4]CHEN K H,HSU Y S.A high-PSRR reconfigurable class-AB/D audio amplifier driving a hands-free/receiver 2-in-1 loudspeaker[J].IEEE Journal of Solid-State Circuits, 2012,47(11):2586-2603.
[5]LV Jian,WEI Linhai,ANG Simon S,et al.A new curvature-compensated,high-PSRR CMOS bandgap reference[J].Analog Integrated Circuits and Signal Processing,2015,82(3):675-682.
[6]AKBARI Meysam,BIABANIFARD Sadegh,ASADI Shahrouz,et al.High performance folded cascode OTA using positive feedback and recycling structure[J].Analog Integrated Circuits and Signal Processing,2015,82(1): 217-227.
[7]朱治鼎,彭晓宏,吕本强,等.高性能折叠式共源共栅运算放大器的设计[J].微电子学,2012,42(2):146-149.DOI: 10.3969/j.issn.1004-3365.2012.02.002.
[8]VALERO M R,MEDRANO N,CELMA S,et al.A high-performance 1.2 V-99 μ W rail-to-rail CMOS class AB amplifier[J].Microelectronics journal,2015,46(1):96-102.
[9]ACHILLE Donida,DIEGO Barrettino.A low-power interface circuit for piezoresistive transducers[C].IEEE International Instrumentation and Measurement Technology Conference,Pisa,2015:1774-1778.
[10]刘文楷,苏宁宁,戴澜,等.霍尔传感器读出电路的低噪声运算放大器设计[J].电子世界,2016,(17):79-80,82.
[11]XING Xinpeng,GIELEN Georges G E.A 42 fJ/step-FoM two-step VCO-Based Delta-Sigma ADC in 40 nm CMOS[J]. IEEE Journal of Solid-State Circuits,2015,50(3):714-723.
[12]YUKIKO Arai,YU Liu,HARUO Kobayashi,et al. Noise-shaping cyclic ADC architecture[C].International Conference on Advanced Micro-Device Engineering 5th, Kiryu,Japan,2015:93-100.
[13]胡志峰,肖剑波.低噪声前置放大电路设计[J].核电子学与探测技术,2014,(11):1381-1384.DOI:10.3969/j.issn. 0258-0934.2014.11.024.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

一种低噪声前置放大器的电路设计

Design of a Low Noise Preamplifier

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