ONO反熔丝器件可编程特性研究

doi:10.16257/j.cnki.1681-1070.2021.0715

电子与封装 ›› 2021, Vol. 21 ›› Issue (7): 070404 . doi: 10.16257/j.cnki.1681-1070.2021.0715

ONO反熔丝器件可编程特性研究

潘福跃¹;张明新¹;曹利超¹;刘佰清¹;洪根深¹;张海良¹;刘国柱^1,2

1. 中国电子科技集团公司第五十八研究所，江苏无锡　214072;2. 东南大学电子科学与工程学院，南京　210096

收稿日期:2021-01-18 出版日期:2021-07-22 发布日期:2021-07-06
作者简介:潘福跃（1989—），男，山东济南人，硕士，2013年毕业于电子科技大学微电子与固体电子学院，主要研究方向为功率半导体集成电路设计、高可靠集成电路等。

Researchon Programming Characteristics of ONO Anti-fuse Devices

PAN Fuyue¹, ZHANG Mingxin¹,CAO Lichao¹,LIU Baiqing¹,HONG Genshen¹,ZHANG Hailiang¹,LIU Guozhu^1,2

1. The 58th Research Institute, CETC, Wuxi 214072, China;2. Southeast University, School of Electronic Science and Engineering, Nanjin 210096, China

Received:2021-01-18 Online:2021-07-22 Published:2021-07-06

摘要/Abstract

摘要： ONO反熔丝器件具有可靠性高、抗辐射、高开关比等优异特性，一直用于抗辐射可编程逻辑器件。基于0.6 μm CMOS工艺，分别采用“AF+MOS”和“MOS+AF”集成方法成功制备了ONO反熔丝器件，研究了ONO反熔丝阵列单元编程特性、导通电阻与编程电流以及编程时间之间的关系，同时对两种典型编程通路的编程特性进行特征化表征，最后考察了反熔丝单元编程前后的电应力可靠性。研究结果表明，采用“AF+MOS”集成方法制备的ONO反熔丝器件具有优良的击穿均匀性和编程特性。

关键词: ONO, 反熔丝, 击穿电压, 导通电阻

Abstract: ONO anti-fuse devices have been widely used in programmable logic devices because of its high reliability, radiation resistance and high switching ratio. The programming characteristics of ONO anti-fuse array elements fabricated in 0.6 μm “AF+MOS” and “MOS+AF” processes are investigated. The relationship between the resistance of ONO anti-fuse devices and the programming current and time is studied. Meanwhile, two typical programming paths are characterized. Finally, the electrical stress reliability of the anti-fuse cells before and after programming is investigated. The results show that the ONO anti-fuse devices fabricated by an "AF+MOS" integration method have excellent breakdown uniformity and programming characteristics.

Key words: ONO, anti-fusedevices, breakdownvoltage, on-stateresistance

中图分类号:

O472⁺.4

潘福跃;张明新;曹利超;刘佰清;洪根深;张海良;刘国柱. ONO反熔丝器件可编程特性研究[J]. 电子与封装, 2021, 21(7): 070404 .

PAN Fuyue, ZHANG Mingxin,CAO Lichao,LIU Baiqing,HONG Genshen,ZHANG Hailiang,LIU Guozhu. Researchon Programming Characteristics of ONO Anti-fuse Devices[J]. Electronics & Packaging, 2021, 21(7): 070404 .

参考文献

[1] 刘佰清，洪根深，郑若成，等. ONO反熔丝器件寿命预测模型的建立[J]. 材料导报, 2015, 29(14):152-154.
[2] 刘国柱，张明，郑若成，等. ONO反熔丝器件制备工艺及其特性研究[J]. 材料导报：纳米及新材料专辑，2014(2)：128-130.
[3] 徐海铭，王印权，郑若成，等. 应用于OTP单元的高可靠性MTM反熔丝特性[J]. 电子与封装, 2017, 17(3)：36-39.
[4] LIU G Z, WU J W, YU Z G, et al. Characterization and modeling of a highly reliable ONO antifuse for high-performance FPGA and PROM[J]. International Journal of Materials Science and Applications, 2016, 5(3): 169-177.
[5] CHIANG S, WANG R, SPEERS T, et al. Conductive channel in ONO formed by controlled dielectric breakdown[C]. International Symposium on VLSI Technology, Systems, and Applications, 1992, 20-21.
[6] MATSUO N, FUJIWARA H, AND KOYANAGI T. Numerical analysis for conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17(2), 56-58.
[7] GONG S S, BURNHAM M E, THEODORE N D, et al. Evaluation of Qbdfor Electrons Tunneling from the Si/Si02 Interface Compared to Electron Tunneling from the Poly-Si/Si02 Interface[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40(7), 1251-1257.
[8] SCHWANK J R, FERLET-CAVROIS V, SHANEYFELT M R, et al. Radiation effects in SOI technologies[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50(3), 522-528.
[9] LIU G Z, HONG G S, ZHENG R C, X, et al. High quality of ultra-thin SiOxNy films prepared in nitrous oxide ambients using thermal low-pressure oxynitridation[J]. Materials and Manufacturing Processes, 2014, 29(9) ,1050-1055.
[10] MORI S, SAKAGAMI E, ARAKI H, et al. ONO inter-poly dielectric scaling for nonvolatile memory applications[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38(2), 386-391.

[1]	郑若成;王印权;孙杰杰;田海燕;郑良晨;吴素贞. 反熔丝型FPGA电路过电应力失效分析[J]. 电子与封装, 2021, 21(6): 60403-.
[2]	曹正州, 张艳飞, 徐玉婷, 江燕, 孙静. 基于反熔丝技术的FPGA配置芯片设计[J]. 电子与封装, 2021, 21(12): 0-.
[3]	李怡，乔明. 700 V超低比导通电阻的LDMOS器件[J]. 电子与封装, 2020, 20(8): 80401-.
[4]	敖国军，廖小平，杨兵. 磁耦数字隔离器陶瓷封装技术研究[J]. 电子与封装, 2020, 20(8): 80202-.
[5]	孟培培,乔明. 一种250 V高动态阻抗恒流器件优化设计[J]. 电子与封装, 2020, 20(6): 60401-.
[6]	马阔,乔明,周锌,王卓. 高压SOI pLDMOS器件电离辐射总剂量效应研究[J]. 电子与封装, 2020, 20(6): 60403-.
[7]	何林蓉,乔明. 基于双极载流子导电的新型恒流器件[J]. 电子与封装, 2020, 20(5): 50403-.
[8]	陈正才;黄龙;彭时秋. 5 V双向TVS器件击穿电压对称性分析与优化设计[J]. 电子与封装, 2020, 20(10): 100404-.
[9]	杨昆;乔明;何俊卿;王睿. 横向超结器件耐压与比导的优值仿真与实验验证[J]. 电子与封装, 2020, 20(10): 100401-.
[10]	郑若成, 曾庆平, 吴素贞, 王印权, 吴建伟, 徐海铭, 洪根深. MTM反熔丝薄膜单项工艺DOE试验设计开发方法[J]. 电子与封装, 2018, 18(9): 45-48.
[11]	蔺旭辉，曹靓，马金龙，王栋. 用于反熔丝型FPGA的多电平IO端口电路设计[J]. 电子与封装, 2017, 17(8): 13-15.
[12]	王印权，郑若成，徐海铭，吴素贞，洪根深. MTM反熔丝单元的辐照特性研究[J]. 电子与封装, 2017, 17(4): 34-38.
[13]	徐海铭，王印权，郑若成，洪根深. 应用于OTP单元的高可靠性 MTM反熔丝特性[J]. 电子与封装, 2017, 17(3): 36-39.
[14]	徐海铭，顾祥. 编程MTM反熔丝的特征电压研究[J]. 电子与封装, 2017, 17(2): 37-39.
[15]	袁同伟, 潘滨, 孙杰杰, 胡晓琴. 一种用于OTP存储器的灵敏放大器设计[J]. 电子与封装, 2016, 16(7): 29-33.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

ONO反熔丝器件可编程特性研究

Researchon Programming Characteristics of ONO Anti-fuse Devices

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价