大气中子及α粒子对芯片软错误的贡献趋势*

doi:10.16257/j.cnki.1681-1070.2023.0103

摘要/Abstract

摘要： 在先进工艺集成电路中，高能中子、热中子和α粒子造成的软错误愈发受到关注。研究了150 nm至16 nmFinFET工艺节点器件在大气环境中的单粒子效应。随着工艺节点的缩小，高能中子引起的单粒子翻转截面和软错误率整体上均呈下降趋势。高能中子引起的软错误率在各个节点中均占据主导地位。热中子在45 nm工艺节点下对软错误率有明显贡献，由其与W塞中所包含的¹⁰B核反应引起。α粒子在先进器件中的贡献整体出现下降趋势，在40 nm工艺节点下出现极小值。此外，16 nm工艺节点下FinFET结构的引入使集成电路的软错误率下降了一个数量级。

关键词: 单粒子效应, 中子, 热中子, α粒子, FinFET

Abstract: In advanced process integrated circuits, soft errors caused by high-energy neutrons, thermal neutrons and α particles are gaining increasing attention. Single event effects of 150 nm to 16 nm FinFET devices in atmospheric environments are investigated. The single event flip cross section and soft error rate caused by high-energy neutrons both decrease with the shrinkage of the process node. High-energy neutrons dominate the soft error rate in each node. Thermal neutrons contributed significantly to the soft error rate at the 45 nm process due to its nuclear reaction with ¹⁰B in W plug. The contribution of α particles in advanced devices shows an overall downward trend, with minimal values at 40 nm. In addition, the introduction of the FinFET structure at 16 nm node reduces the soft error rate of the integrated circuit by an order of magnitude.

Key words: single event effect, neutron, thermal neutron, α particle, FinFET

中图分类号:

TN306

余淇睿, 张战刚, 李斌, 吴朝晖, 雷志锋, 彭超. 大气中子及α粒子对芯片软错误的贡献趋势^*[J]. 电子与封装, 2023, 23(8): 080401 .

YU Qirui, ZHANG Zhan’gang, LI Bin, WU Zhaohui, LEI Zhifeng, PENG Chao. Contribution of Atmospheric Neutrons and α Particles to the Soft Errors of Integrated Circuits[J]. Electronics & Packaging, 2023, 23(8): 080401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

大气中子及α粒子对芯片软错误的贡献趋势^*

Contribution of Atmospheric Neutrons and α Particles to the Soft Errors of Integrated Circuits

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