GaN垂直结构器件结终端设计*

doi:10.16257/j.cnki.1681-1070.2023.0034

摘要/Abstract

摘要： 得益于优异的材料性能，基于宽禁带半导体氮化镓（GaN）的功率电子器件得到广泛关注。与横向的高电子迁移率晶体管（HEMT）结构相比，垂直结构的GaN功率器件更易于实现高耐压和大电流，且其不被表面陷阱态影响，性能较为稳定，有望进一步拓展在中高压领域的应用。在垂直器件中，一个重要的设计是利用结终端来扩展器件内部电场的分布，减轻或消除结边缘的电场集聚效应，防止功率器件的过早击穿。结合GaN垂直结构肖特基二极管（SBD）以及PN结二极管（PND），回顾了常用的结终端设计方法和工艺技术，对各自的优缺点进行了总结。此外，GaN的材料性能与传统硅（Si）以及碳化硅（SiC）材料存在较大差异，讨论了其对结终端设计和制备的影响。

关键词: 宽禁带半导体, 氮化镓, 垂直结构器件, 二极管, 结终端

Abstract: Thanks to the excellent material properties, power electronic devices based on wide bandgap semiconductor gallium nitride (GaN) have been paid much attention. Compared with lateral high electron mobility transistor (HEMT) structures, vertical structured GaN power devices are easier to realize high blocking voltage and high operation current. Meanwhile, it is much stable and immune to surface trap states. Therefore, GaN power devices are supposed to be promising candidates for medium and high voltage applications. In a vertical device, junction terminal is an important design to spread the electric field distribution in the device, alleviate or eliminate the field-crowding effect near the junction edge, and protect the device from premature breakdown. The design and fabrication technology of frequently used junction terminals in GaN vertical Schottky barrier diodes (SBDs) and PN diodes (PNDs) are reviewed, and the benefits and shortcomings are discussed, respectively. In addition, the material properties of GaN are quite different with traditional silicon (Si) and silicon carbide (SiC) counterparts, and influences on the design and fabrication of junction terminals are also discussed.

Key words: wide bandgapsemiconductor, GaN, vertical structure device, diodes, junction terminal

中图分类号:

TN312+.4

徐嘉悦;王茂俊;魏进;解冰;郝一龙;沈波. GaN垂直结构器件结终端设计^*[J]. 电子与封装, 2023, 23(1): 010105 .

XU Jiayue, WANG Maojun, WEI Jin, XIE Bing, HAO Yilong, SHEN Bo. Junction Terminal Design for GaN Vertical Structure Devices[J]. Electronics & Packaging, 2023, 23(1): 010105 .

参考文献

[1] HOWER P L, PENDHARKAR S, EFLAND T. Current status and future trends in silicon power devices[C]//2010 International Electron Devices Meeting. San Francisco, CA, USA: IEEE, 2010: 13.1.1-13.1.4.
[2] AMANO H, BAINES Y, BEAM E, et al. The 2018 GaN power electronics roadmap[J]. Journal of Physics D: Applied Physics, 2018, 51(16): 163001.
[3] CHEN K J, H?BERLEN O, LIDOW A, et al. GaN-on-Si power technology: Devices and applications[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 779-795.
[4] YELURI R, LU J, HURNI C A, et al. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction[J]. Applied Physics Letters, 2015, 106(18): 183502.
[5] ZHANG Y H, SUN M, LIU Z H, et al. Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors[J]. IEEE Transactions on Electron Devices, 2013, 60(7): 2224-2230.
[6] SANG L, REN B, SUMIYA M, et al. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes[J]. Applied Physics Letters, 2017, 111(12): 122102.
[7] HASHIMOTO S, YOSHIZUMI Y, TANABE T, et al. High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates[J]. Journal of Crystal Growth, 2007, 298: 871-874.
[8] HU J, ZHANG Y H, SUN M, et al. Materials and processing issues in vertical GaN power electronics[J]. Materials Science in Semiconductor Processing, 2018, 78: 75-84.
[9] FU H Q, FU K, CHOWDHURY S, et al. Vertical GaN power devices: Device principles and fabrication technologies—part II[J]. IEEE Transactions on Electron Devices, 2021, 68(7): 3212-3222.
[10] BALIGA B J. Fundamentals of power semiconductor devices[M]. New York: Springer, 2008.
[11] VASSILEVSKI K V, RASTEGAEVA M G, BABANIN A I, et al. Fabrication of GaN mesa structures[J]. MRS Internet Journal of Nitride Semiconductor Research, 1996, 1(1): 38.
[12] FUKUSHIMA H, USAMI S, OGURA M, et al. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability[J]. Japanese Journal of Applied Physics, 2019, 58(SC): SCCD25.
[13] MAEDA T, NARITA T, UEDA H, et al. Parallel-plane breakdown fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n junction diodes with double-side-depleted shallow bevel termination[C]//2018 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA: IEEE, 2018: 30.1.1-30.1.4.
[14] MAEDA T, NARITA T, UEDA H, et al. Design and fabrication of GaN p-n junction diodes with negative beveled-mesa termination[J]. IEEE Electron Device Letters, 2019, 40(6): 941-944.
[15] ZENG K, CHOWDHURY S. Designing beveled edge termination in GaN vertical p-i-n diode-bevel angle, doping, and passivation[J]. IEEE Transactions on Electron Devices, 2020, 67(6): 2457-2462.
[16] NIE K W, XU W Z, REN F F, et al. Highly enhanced inductive current sustaining capability and avalanche ruggedness in GaN p-i-n diodes with shallow bevel termination[J]. IEEE Electron Device Letters, 2020, 41(3): 469-472.
[17] FUKUSHIMA H, USAMI S, OGURA M, et al. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown[J]. Applied Physics Express, 2019, 12(2): 026502.
[18] MUDIYANSELAGE H D, WANG D, FU H. Wide bandgap vertical kV-class β-Ga?O?/GaN heterojunction p-n power diodes with mesa edge termination[J]. IEEE Journal of the Electron Devices Society, 2022, 10: 89-97.
[19] ZHANG Y, SUN M, LIU Z, et al. Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings[C]//2016 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA: IEEE, 2016: 10.2.1-10.2.4.
[20] LIU J C, XIAO M, ZHANG R Z, et al. 1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability[J]. IEEE Transactions on Electron Devices, 2021, 68(4): 2025-2032.
[21] ZHANG Y H, LIU Z H, TADJER M J, et al. Vertical GaN junction barrier Schottky rectifiers by selective ion implantation[J]. IEEE Electron Device Letters, 2017, 38(8): 1097-1100.
[22] ZHOU Y H, WU Q S, ZHANG Q, et al. Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability[J]. AIP Advances, 2022, 12(6): 065117.
[23] NOMOTO K, HU Z, SONG B, et al. GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2[C]//2015 IEEE International Electron Devices Meeting (IEDM). Washington, DC, USA: IEEE, 2015: 9.7.1-9.7.4.
[24] OZBEK A M, BALIGA B J. Planar nearly ideal edge-termination technique for GaN devices[J]. IEEE Electron Device Letters, 2011, 32(3): 300-302.
[25] ALOK D, BALIGA B J. SiC device edge termination using finite area argon implantation[J]. IEEE Transactions on Electron Devices, 1997, 44(6): 1013-1017.
[26] LIU Z R, WANG J F, GU H, et al. High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment[J]. AIP Advances, 2019, 9(5): 055016.
[27] LIU X K, LIN F, LI J, et al. 1.7-kV vertical GaN-on-GaN Schottky barrier diodes with helium-implanted edge termination[J]. IEEE Transactions on Electron Devices, 2022, 69(4): 1938-1944.
[28] HAN S W, YANG S, SHENG K. Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop[J]. IEEE Electron Device Letters, 2019, 40(7): 1040-1043.
[29] YIN R Y, LI Y, WEN C P, et al. High voltage vertical GaN-on-GaN Schottky barrier diode with high energy fluorine ion implantation based on space charge induced field modulation (SCIFM) effect[C]//2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020: 298-301.
[30] NAKAMURA S, IWASA N, SENOH M, et al. Hole compensation mechanism of P-Type GaN films[J]. Japanese Journal of Applied Physics, 1992, 31(5R): 1258-1266.
[31] OKAMOTO Y, SAITO M, OSHIYAMA A. First-principles calculations on Mg impurity and Mg-H complex in GaN[J]. Japanese Journal of Applied Physics, 1996, 35(7A): L807-L809.
[32] CZERNECKI R, GRZANKA E, JAKIELA R, et al. Hydrogen diffusion in GaN:Mg and GaN:Si[J]. Journal of Alloys and Compounds, 2018, 747: 354-358.
[33] FU H Q, FU K, HUANG X Q, et al. High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination[J]. IEEE Electron Device Letters, 2018, 39(7): 1018-1021.
[34] BIAN Z L, ZENG K, CHOWDHURY S. 2.8 kV avalanche in vertical GaN PN diode utilizing field plate on hydrogen passivated P-layer[J]. IEEE Electron Device Letters, 2022, 43(4): 596-599.
[35] YIN R Y, LI C, ZHANG B, et al. Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes[J]. Fundamental Research, 2022, 2(4): 629-634.
[36] GUO X L, ZHONG Y Z, ZHOU Y, et al. Nitrogen-implanted guard rings for 600-V quasi-vertical GaN-on-Si Schottky barrier diodes with a BFOM of 0.26 GW/cm2[J]. IEEE Transactions on Electron Devices, 2021, 68(11): 5682-5686.
[37] BOCKOWSKI M. Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing[J]. Applied Physics Letters, 2019, 115(14): 142104.
[38] DICKERSON J R, ALLERMAN A A, BRYANT B N, et al. Vertical GaN power diodes with a bilayer edge termination[J]. IEEE Transactions on Electron Devices, 2016, 63(1): 419-425.
[39] WANG J, CAO L, XIE J, et al. High voltage vertical p-n diodes with ion-implanted edge termination and sputtered SiNx passivation on GaN substrates[C]//2017 IEEE International Electron Devices Meeting (IEDM), 2017: 9.6.1-9.6.4.
[40] WANG J, MCCARTHY R, YOUTSEY C, et al. High-voltage vertical GaN p-n diodes by epitaxial liftoff from bulk GaN substrates[J]. IEEE Electron Device Letters, 2018, 39(11): 1716-1719.
[41] WANG J, CAO L, XIE J, et al. High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination[J]. Applied Physics Letters, 2018, 113(2): 023502.
[42] OHTA H, ASAI N, HORIKIRI F, et al. Two-step mesa structure GaN p-n diodes with low on-resistance, high breakdown voltage, and excellent avalanche capabilities[J]. IEEE Electron Device Letters, 2020, 41(1): 123-126.
[43] YATES L, GUNNING B P, CRAWFORD M H, et al. Demonstration of >6.0-kV breakdown voltage in large area vertical GaN p-n diodes with step-etched junction termination extensions[J]. IEEE Transactions on Electron Devices, 2022, 69(4): 1931-1937.
[44] LIN W, WANG M, YIN R, et al. Hydrogen-modulated step graded junction termination extension in GaN vertical p-n diodes[J]. IEEE Electron Device Letters, 2021, 42(8): 1124-1127.
[45] HU Z, NOMOTO K, QI M, et al. 1.1-kV vertical GaN p-n diodes with p-GaN regrown by molecular beam epitaxy[J]. IEEE Electron Device Letters, 2017, 38(8): 1071-1074.
[46] FU K, FU H, HUANG X, et al. Demonstration of 1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics[J]. IEEE Electron Device Letters, 2019, 40(11): 1728-1731.
[47] ARMSTRONG A M, ALLERMAN A A, PICKRELL G W, et al. Etched-and-regrown GaN pn -diodes with 1600 V blocking voltage[J]. IEEE Journal of the Electron Devices Society, 2021, 9: 318-323.
[48] LIU J, XIAO M, ZHANG Y, et al. 1.2 kV vertical GaN fin JFETs with robust avalanche and fast switching capabilities[C]//2020 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA: IEEE, 2020: 23.2.1-23.2.4.
[49] OHTA H, HAYASHI K, NAKAMURA T, et al. High breakdown voltage vertical GaN p-n junction diodes using guard ring structures[C]//2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). Kyoto, Japan: IEEE, 2017: 54-55.
[50] ZHOU J Y, HE L, LI X B, et al. Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure[J]. Superlattices and Microstructures, 2021, 151: 106820.
[51] FU H Q, FU K, ALUGUBELLI S R, et al. High voltage vertical GaN p-n diodes with hydrogen-plasma based guard rings[J]. IEEE Electron Device Letters, 2020, 41(1): 127-130.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN垂直结构器件结终端设计^*

Junction Terminal Design for GaN Vertical Structure Devices

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	秦尧;明鑫;叶自凯;庄春旺;张波. GaN HEMT及GaN栅驱动电路在DToF激光雷达中的应用^*[J]. 电子与封装, 2023, 23(1): 10103-.
[2]	李秋璇, 李杨, 王霄, 陈治伟, 敖金平. 微波氮化镓肖特基二极管及其应用^*[J]. 电子与封装, 2023, 23(1): 10106-.
[3]	何云龙;洪悦华;王羲琛;章舟宁;张方;李园;陆小力;郑雪峰;马晓华. 氧化镓材料与功率器件的研究进展[J]. 电子与封装, 2023, 23(1): 10107-.
[4]	黄森, 张寒, 郭富强, 王鑫华, 蒋其梦, 魏珂, 刘新宇. 面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件^*[J]. 电子与封装, 2023, 23(1): 10102-.
[5]	汪正鹏, 叶建东, 郝景刚, 张贻俊, 况悦, 巩贺贺, 任芳芳, 顾书林, 张荣. 亚稳相Ga₂O₃异质外延的研究进展[J]. 电子与封装, 2023, 23(1): 10110-.
[6]	刘超铭;王雅宁;魏轶聃;王天琦;齐春华;张延清;马国亮;刘国柱;魏敬和;霍明学. SiC功率器件辐照效应研究进展[J]. 电子与封装, 2022, 22(6): 60101-.
[7]	杨青;李宁. 微波PIN二极管复合介质膜钝化技术的研究[J]. 电子与封装, 2022, 22(12): 120401-.
[8]	汤茗凯;唐世军;顾黎明;周书同. C波段连续波200 W GaN内匹配功率管的设计与实现[J]. 电子与封装, 2021, 21(5): 50302-.
[9]	米丹;周昕杰;周晓彬;何正辉;卢嘉昊. 深亚微米SOI工艺ESD防护器件设计[J]. 电子与封装, 2021, 21(5): 50401-.
[10]	冒国均, 边炜钦, 薛海卫, 杨光安. 基于SOI工艺的二极管瞬时剂量率效应数值模拟[J]. 电子与封装, 2021, 21(3): 30403-.
[11]	陈全胜, 张明, 彭时秋, 陈培仓, 王涛, 贺琪. 硅基雪崩光电二极管技术及应用^*[J]. 电子与封装, 2021, 21(3): 30101-.
[12]	周德金, 黄伟, 宁仁霞. 微波固态器件与单片微波集成电路技术的新发展^*[J]. 电子与封装, 2021, 21(2): 20105-.
[13]	赖静雪, 陈万军, 孙瑞泽, 刘超, 张波. GaN单片功率集成电路研究进展^*[J]. 电子与封装, 2021, 21(2): 20103-.
[14]	高嘉平, 王彬, 司耸涛, 虞勇坚. 热插拔损伤电路的失效分析及整改^*[J]. 电子与封装, 2021, 21(12): 120105-.
[15]	杨晓菲;于凯;董妮;荆海燕;刘爽. 3300 V混合SiC IGBT模块研制与性能分析*[J]. 电子与封装, 2021, 21(11): 110403-.