关键词: 铝溅射, 铝硅铜, 铝铜, 基区接触电阻, 硅空洞, 铝欠缺, 中点电位, 均匀性

Abstract: Integrated circuit chips require high uniformity and stability of device parameters. In the manufacturing process of integrated circuits, nonuniformity of device parameters caused by process abnormity affects chip performance and wafer yield directly. As causes of nonuniformity of device parameters are ever-changing, solving problems with product analysis to ensure chip performance and normal process is a problem that design and product engineers are often faced with. A product case is introduced in this paper, from failure phenomenon, causal analysis and laboratory analysis, design improvement plan to test result. It is introduced that to reduce base hole contact resistance and improve the uniformity of the contact resistance with changing the sputtering aluminum material, in order to solve the problem of midpoint potential drift in TV and CRT display Vertical Output IC due to the nonuniformity of contact resistance of base hole caused by technological issues.

Key words: Aluminum sputtering, AlSiCu, AlCu, base contact resistance, silicon cavity, Aluminum deficiency, midpoint potential, uniformity