关键词: 逆导型IGBT, 电压回跳, 半超结, 折中特性, 反向恢复

Abstract: This paper proposes a Semi-Superjunction RC-IGBT with a sandwich collector structure (Sandwich Semi-Superjunction Reverse Conducting-Insulated Gate Bipolar Transistor, SSS-RC-IGBT). The introduction of a high-resistance N^- layer between the N⁺ buffer and the P⁺/N⁺ collector increases the short-circuit resistance of the collector. By introducing a semi-Superjunction on the collector side, the resistance of the drift region is reduced, thereby eliminating the snapback of the device. Sentaurus simulation results show that when the depth of the N/P pillar is 70 μm, and the doping concentration of the N/P pillar is 3×1015 cm-3, and the thickness of the high-resistance N-layer is 5 μm, and the doping concentration of N-layer is 5×1013 cm^-3, the device completely eliminate snapback phenomenon. Since the proposed device can be fully turned on and has a higher injection efficiency, the forward voltage drop of the device is reduced by 9.7%. When the device is turned off at a current density of 100 A/cm², the turn-off loss of the device will be reduced by 30.6%. At the same time, the device has better Vce-Eoff tradeoff characteristic and reverse recovery characteristic.

Key words: reverse conducting-insulated gate bipolar transistor, snapback, semi-superjunction, trade off, reverse recovery