关键词: ?超宽带, 分布式, 功率管放大器

Abstract: A 2~18 GHz wide band MMIC is designed and manufactured by 0.15 μm GaN HEMT process in this paper. Two stage distribute amplifier is used to improve the gain. The overall circuit schematic and layout is simulated and optimized in momentum of ADS. The electrical characteristics are as follows, in the working frequency range of 2~18 GHz, small signal gain > 20 dB, gain flatness is ±1.5 dB, input and output return loss < -10 dB, P_max > 31 dBm, PAE > 7%. The working voltage of the circuit is 25 V, a maximum power consumption is 7 W, and a chip area is 4.5 mm×2.5 mm.

Key words: ultra-broadband, distributedPA, poweramplifier