关键词: 绝缘体上硅, 光电流, 响应度, 频率响应

Abstract: A photodetector based on SOI materials that combines responsiveness and bandwidth has been designed, using a standard 0.18μm CMOS process that is fully compatible with existing processes and easy to integrate monolithically. The photodetector is simulated using Silvaco and the results are analysed. The factors affecting the responsiveness and bandwidth of the photodetector are analysed, and a photodetector with high responsiveness and high bandwidth is achieved by controlling the thickness of the absorber layer, the ion injection depth and other process steps, and by designing an optimised deep N-well structure in conjunction with the device characteristics. The SOI-based photodetector achieves a responsivity of 0.33 A/W at 850 nm with a -3 dB bandwidth of 120 MHz under a 5 V reverse bias, and the results are of great significance for the development of photodetectors for high-speed applications.

Key words: silicononinsulator, photocurrent, responsivity, frequencyresponsecharacteristic