10 kV SiC GTO器件特性研究*

doi:10.16257/j.cnki.1681-1070.2022.0302

电子与封装 ›› 2022, Vol. 22 ›› Issue (3): 030102 . doi: 10.16257/j.cnki.1681-1070.2022.0302

所属专题：碳化硅功率半导体技术

• “碳化硅功率半导体技术”专题 • 上一篇下一篇

10 kV SiC GTO器件特性研究^*

程琳¹;罗佳敏²;龚存昊²;张有润²;唐毅¹;门富媛¹;都小利¹

1. 国网安徽省电力有限公司培训中心，合肥 ?230022；2. 电子科技大学电子科学与工程学院，成都 ?611731

收稿日期:2021-10-19 出版日期:2022-03-24 发布日期:2021-12-09
作者简介:程琳（1975—），男，安徽无为人，硕士，高级工程师，从事半导体器件研究。

Research on Characteristics of 10 kV SiC GTO Device

CHENG Lin¹, LUO Jiamin², GONG Cunhao², ZHANG Yourun², TANG Yi¹, MEN Fuyuan¹, DU Xiaoli¹

1. State Grid Anhui Training Center, Hefei 230022, China; 2. School of Electronic Science and Engineering, University of ElectronicScience and Technology of China, Chengdu611731, China

Received:2021-10-19 Online:2022-03-24 Published:2021-12-09

摘要/Abstract

摘要： 摘 ?要：基于第三代宽禁带半导体材料4H-SiC的超高压门极可关断晶闸管（Gate Turn-Off Thyristor, GTO）器件，在双向载流子注入和电导调制效应的作用下，器件在耐高压的同时获得高通态电流，在功率密度和可靠性等方面可以满足超大功率应用的要求。考虑到正向阻断电压、正向导通压降和脉冲电路下的开启时间等，提出了10 kV 4H-SiC GTO器件，借助Silvaco TCAD仿真工具研究了GTO器件的正向导通特性、正向阻断特性、动态开关特性和脉冲放电特性，得出了其正向导通压降为4.605 V，正向阻断电压为14.78 kV，开启时间为55 ns，关断时间为13.3 ns。

关键词: 4H-SiC, 门极可关断晶闸管, 脉冲放电特性

Abstract: The ultra-high voltage gate turn-off thyristor (GTO) device based on the third-generation wide-bandgap semiconductor material 4H-SiC is under the effect of bidirectional carrier injection and conductance modulation. It can obtain high on-state current at the same time of high withstand voltage, and meet the requirements of ultra-high power applications in terms of power density and reliability. Considering the forward blocking voltage, forward conduction voltage drop and the turn-on time under the pulse circuit, a 10 kV 4H-SiC GTO device is proposed, with the help of Silvaco TCAD simulation tool, the forward conduction characteristics, forward blocking characteristics, dynamic switching characteristics and pulse discharge characteristics of GTO devices are studied. It is concluded that the forward voltage drop is 4.605 V, the forward blocking voltage is 14.78 kV, the turn-on time is 55 ns, and the turn-off time is 13.3 ns.

Key words: 4H-SiC, gateturn-offthyristor, pulsedischargecharacteristic

中图分类号:

TN341

程琳;罗佳敏;龚存昊;张有润;唐毅;门富媛;都小利. 10 kV SiC GTO器件特性研究^*[J]. 电子与封装, 2022, 22(3): 030102 .

CHENG Lin, LUO Jiamin, GONG Cunhao, ZHANG Yourun, TANG Yi, MEN Fuyuan, DU Xiaoli. Research on Characteristics of 10 kV SiC GTO Device[J]. Electronics & Packaging, 2022, 22(3): 030102 .

参考文献

[1] CHENG L, AGARWAL A, O'LOUGHLIN M, et al. Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications[C]// Energy Conversion Congress and Exposition, Raleigh, NC, USA, 2012: 2249-2252.
[2] CHINTHAVALI M S, TOLBERT L M, OZPINECI B. 4H-SiC GTO thyristor and p-n diode loss models for HVDC converter[C]// Industry Applications Conference and IAS Annual Meeting, Seattle, WA, USA, 2004: 1238-1243.
[3] HUANG A Q. Power semiconductor devices for smart grid and renewable energy systems[J]. Proceedings of the IEEE, 2017, 105(11): 2019-2047.
[4] LACOUTURE S, SCHROCK J A, RAY W B, et al. Extraction of safe operating area and long term reliability of experimental silicon carbide super gate turn off thyristors[C]// Pulsed Power Conference, Austin, TX, USA, 2015: 1-4.
[5] SHE X, HUANG A Q, LUCIA O, et al. Review of silicon carbide power devices and their applications[J]. Transactions on Industrial Electronics, 2017, 64(10): 8193-8205.
[6] OHASHI H, OMURA I. Role of simulation technology for the progress in power devices and their applications[J]. Transactions on Electron Devices, 2013, 60(2): 528-534.
[7] AGARWAL A K, CASADY J B, ROWLAND L B, et al. 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTOs)[J]. Electron Device Letters, 1997, 18(11): 518-520.
[8] SONG X, HUANG A Q, LEE M, et al. 22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA[C]// International Symposium on Power Semiconductor Devices & IC's, Hong Kong, China, 2015: 277-280.
[9] SCHROCK J A, HIRSCH E A, LACOUTURE S, et al. Failure modes of 15-kV SiC SGTO thyristors during repetitive extreme pulsed overcurrent conditions[J]. Transactions on Power Electronics, 2016, 31(12): 8058-8062.
[10] RYU S H, LICHTENWALNER D J, BRUNT E V, et al. Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor[C]// European Conference on Silicon Carbide & Related Materials, Halkidiki, Greece, 2016: 1.
[11] ZHOU K, CUI Y, LI L, et al. Influence of carrier lifetime on silicon carbide power devices for pulsed power application[C]// International Symposium on Power Semiconductor Devices & IC's, Shanghai, China, 2019: 487-490.

中文引用格式：程琳，罗佳敏，龚存昊，等. 10 kV SiC GTO器件特性研究[J]. 电子与封装，2022，22(3): 030102.
英文引用格式：CHENG Lin, LUO Jiamin, GONG Cunhao, et al. Research on characteristics of 10 kV SiC GTO device[J]. Electronics & Packaging, 2022, 22(3): 030102.
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10 kV SiC GTO器件特性研究^*

Research on Characteristics of 10 kV SiC GTO Device

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