关键词: FD-SOI, 仿真, 辐射, 单粒子, LET, 偏置

Abstract: Single event effect of 0.13 μm fully depleted silicon-on-insulator (FD-SOI) is investigated using Silvaco TCAD simulation tool. The effects of different linear energy transfer (LET), incident position and bias states on single event effect are analyzed. The simulation results show that the increase of LET value affects the channel width and increase transient pulse peak value and pulse width. The single-event transient effect is affected by the incident position. The most sensitive region of the FD-SOI device is near the center of the gate, and the charges are collected at the center of the gate. The device is in different operating bias states, where the off-state bias condition is most affected by the single event effect. The on-state has the smallest transient pulse peak value and pulse width, and the device operating bias state has a strong correlation with the single event effect.

Key words: FD-SOI, simulation, radiation, single event, LET, bias