超高压碳化硅N沟道IGBT器件的设计与制造*

doi:10.16257/j.cnki.1681-1070.2022.0413

电子与封装 ›› 2022, Vol. 22 ›› Issue (4): 040102 . doi: 10.16257/j.cnki.1681-1070.2022.0413

所属专题：碳化硅功率半导体技术

• "碳化硅功率半导体技术”专题 • 上一篇下一篇

超高压碳化硅N沟道IGBT器件的设计与制造^*

杨晓磊;李士颜;赵志飞;李赟;黄润华;柏松

南京电子器件研究所宽禁带半导体电力电子器件国家重点实验室，南京 ?210016

收稿日期:2021-12-28 出版日期:2022-04-25 发布日期:2022-02-17
作者简介:杨晓磊（1993—），男，浙江金华人，硕士，工程师，主要研究方向为SiC大功率电力电子器件的设计与制备。

Design and Fabrication ofUltra-High Voltage SiC N-Channel IGBTs

YANG Xiaolei, LI Shiyan, ZHAO Zhifei, LI Yun, HUANG Runhua, BAI Song

State KeyLaboratory of Wide-Bandgap Semiconductor Power Electronic Devices,

Received:2021-12-28 Online:2022-04-25 Published:2022-02-17

摘要/Abstract

摘要： 自主设计和制备了一种耐压超过20 kV的超高压碳化硅（SiC）N沟道绝缘栅双极晶体管（Insulated Gate Bipolar Transistor，IGBT）器件。通过仿真设计优化了器件结构，同时结合自支撑衬底剥离技术、背面激光退火技术以及载流子寿命提升技术，成功在N型碳化硅衬底上制备了碳化硅N沟道IGBT器件。测试结果表明，该器件阻断电压为20.08 kV时，漏电流为50 μA。当栅电极施加20 V电压、集电极电流为20 A时，器件的导通电压为6.0 V，此时器件的微分比导通电阻为27 mΩ·m²。该值仅为15 kV碳化硅金属氧化物半导体场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET）比导通电阻的1/7，充分显示出碳化硅N沟道IGBT器件作为双极型器件在高阻断电压、高导通电流密度等方面的突出优势。

关键词: 碳化硅, N沟道IGBT, 超高压, 载流子寿命提升技术

Abstract: An ultra-high voltage silicon carbide（SiC）N-channel insulated gate bipolar transistor (IGBT) with a blocking voltage of 20 kV is designed and fabricated. The device structure is optimized by simulation design, meanwhile a SiC N-channel IGBT is fabricated successfully on N-type SiC substrates combined with substrates grinding, laser anneal and carrier lifetime enhancement. A blocking voltage of 20.08 kV has been demonstrated with a leakage current of 50 μA. The on-state characteristics of the N channel SiC IGBT shows a drop voltage of 6.0 V at a collector current of 20 A when the gate voltage is 20 V, and there is a differential specific on-resistance of 27 mΩ·cm² on this point. This value is only 1/7 of the specific on-resistance of 15 kV SiC metal oxide semiconductor field effect transistor (MOSFET), which totally shows the outstanding advantages of SiC N-channel IGBTs in high blocking voltage and high conduction current density.

Key words: SiC, N-channelIGBT, ultra-highvoltage, carrierlifetimeenhancement

中图分类号:

TN322⁺.8

杨晓磊;李士颜;赵志飞;李赟;黄润华;柏松. 超高压碳化硅N沟道IGBT器件的设计与制造^*[J]. 电子与封装, 2022, 22(4): 040102 .

YANG Xiaolei, LI Shiyan, ZHAO Zhifei, LI Yun, HUANG Runhua, BAI Song. Design and Fabrication ofUltra-High Voltage SiC N-Channel IGBTs[J]. Electronics & Packaging, 2022, 22(4): 040102 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

超高压碳化硅N沟道IGBT器件的设计与制造^*

Design and Fabrication ofUltra-High Voltage SiC N-Channel IGBTs

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