4H-SiC功率MOSFET可靠性研究进展*

doi:10.16257/j.cnki.1681-1070.2022.0412

摘要/Abstract

摘要： 4H-SiC功率MOSFET器件具有栅极驱动电路简单、开关时间短、功率密度大、转换效率高等优良特性，在电力电子系统中有着广泛的应用前景。但该器件在可靠性方面仍存在一些问题，如长期工作时的可靠性和动态工作中一些极端情况下的可靠性问题。针对器件的长期可靠性问题，阐述了长期可靠性的表征方法，栅介质制备工艺对长期可靠性的影响和长期可靠性机理研究的相关成果。在动态可靠性方面，对雪崩测试、短路测试和浪涌测试的实验现象和失效机制分析进行了综述。

关键词: 碳化硅, MOSFET, 可靠性

Abstract: Due to the simple gate drive circuit, short switching time, high power density, and high conversion efficiency, 4H-SiC power MOSFET devices have a wide range of application prospects in power electronic systems. However, there are still some problems in the reliability of the device: the reliability of the device during long-term operation and the reliability of some extreme conditions during the dynamic operation. In view of the long-term reliability of the device, the characterization method of the long-term reliability, the influence of the gate dielectric preparation process on the long-term reliability and the mechanism study of the long-term reliability are reviewed. In terms of dynamic reliability, the experimental phenomena and failure mechanism analysis of avalanche, short circuit and surge tests are reviewed.

Key words: SiC, MOSFET, reliability

中图分类号:

TN386

白志强, 张玉明, 汤晓燕, 沈应喆, 徐会源. 4H-SiC功率MOSFET可靠性研究进展^*[J]. 电子与封装, 2022, 22(4): 040101 .

BAI Zhiqiang, ZHANG Yuming, TANG Xiaoyan, SHEN Yingzhe, XU Huiyuan. Research Progress on Reliability of 4H-SiC Power MOSFET[J]. Electronics & Packaging, 2022, 22(4): 040101 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

4H-SiC功率MOSFET可靠性研究进展^*

Research Progress on Reliability of 4H-SiC Power MOSFET

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