SiC功率器件辐照诱生缺陷实验研究进展*

doi:10.16257/j.cnki.1681-1070.2022.0501

摘要/Abstract

摘要： 第三代宽禁带半导体碳化硅（Silicon Carbide, SiC）功率器件在航天、航空和核工业等强辐射领域的极端环境下应用时，会受到辐照损伤的影响诱生缺陷，最终导致器件性能退化或者失效。简要介绍了SiC功率器件辐照效应发展历程和辐照效应，梳理轻离（粒）子辐照诱生缺陷与敏感参数退化的实验规律，分析总结重离子辐照SiC功率器件中一些关键技术问题，特别是不同温度辐照诱生缺陷形成机理的异同，为今后深入开展SiC肖特基二极管（Schottky Barrier Diode，SBD）的辐照诱生缺陷、器件性能退化研究及SiC相关器件的材料抗辐照性能的改善和结构优化提供实验数据和理论依据。

关键词: 碳化硅, 辐照诱生缺陷, 深能级缺陷, 电学性能, 重离子辐照

Abstract: The third generation of wide-band semiconductor SiC power devices, when applied in extreme environments in strong radiation fields such as aerospace, aviation and nuclear industry, will be affected by radiation-induce-damage and defects, which will eventually led to the degradation or failure of device performance. The development of SiC power device irradiation, irradiation effect, light ion (particle) irradiation defects and sensitive parameter degradation are briefly introduced. The key technical problems in SiC power devices, especially the different temperatures irradiation defect formation mechanisms are analyzed, which will provide the experimental data and theoretical basis of the SiC Schottky barrier diode (SBD) irradiation-induce-defects, the device performance degradation and SiC related device material resistance and structure optimization in future.

Key words: siliconcarbide, irradiationinduceddefects, deepleveldefects, electricalproperties, heavyionirradiation

中图分类号:

TN306

杨治美;高旭;李芸;黄铭敏;马瑶;龚敏. SiC功率器件辐照诱生缺陷实验研究进展^*[J]. 电子与封装, 2022, 22(5): 050101 .

YANG Zhimei, GAO Xu, LI Yun, HUANG Mingmin, MA Yao, GONG Min. ResearchProgress of Irradiation Induced Defects Experiment ofSiCPower Device[J]. Electronics & Packaging, 2022, 22(5): 050101 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

SiC功率器件辐照诱生缺陷实验研究进展^*

ResearchProgress of Irradiation Induced Defects Experiment ofSiCPower Device

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