关键词: 双端口同步SRAM, 激励文件, 层次化, 关键路径

Abstract: The large capacity synchronous dual-port SRAM is usually of multi-function, critical time sequence and huge number of storage units. The paper proposes the method of simulation sources generation and parameter extraction for SRAM. The method not only overcomes the shortcomings of the conventional ‘HSIM’ tool but also increases the speed and saves hardware resources during post-layout simulation of large capacity dual-port SRAM. It greatly shortens the design cycle. The chip is manufactured by SMIC 0.13um CMOS process. The experiment results verify the accuracy and effectiveness of the simulation method.

Key words: dual port SRAM, simulation sources, Hcell, critical path