关键词: 硅槽刻蚀, 氯气, 溴化氢, 反应离子刻蚀, 光电继电器, 硅电容

Abstract: The purpose of this study is to develop the process based on polysilicon etching process，Using CL2 and HBR gas for trench etching. With experiments, adjusting the power, pressure, gas flow process window. with the helping of scanning electron microscope, checking the shape of the sidewall of the trench，analysis of the function of each parameters, the factors of affecting trench are obtained. Finally, a trench etching method which can be compatible with CMOS is obtained, successfully produced the depth of 6μm, sidewall smooth trench, reseached for Semiconductors such as photoelectric relay and silicon capacitor.

Key words: trench etching, CL2, HBr, reactive ion etching, photoelectric relay, silicon capacitor