[1]H Banba,H Shiga,A Umezawa,T Miyaba,T Tanzawa,S Atsumi,K Sakui.A CMOS bandgap reference circuit with sub-1-V operation[J].IEEE Journal of Solid-State Circuits,1999,34(5):670-674.
[2]M Chahardori,M Atarodi,M Sharifkhani.A sub 1 V high PSRR CMOS bandgap voltage reference[J].Microelectron.J,2011,42(9):1057-1065.
[3]G A Rincon-Mora,P E Allen.A 1.1-V current-mode and piecewise-linear curvature-corrected bandgap reference[J].IEEE J.Solid-State Circuits,1998,33(10):1551-1554.
[4]Hong-Yi Huang,Ru-Jie Wang,Shih-Chiang Hsu.Piecewise Linear Curvature-Compensated CMOS Bandgap Reference[C].IEEE 15thICECS,2008:308-311.
[5]Yi Huang,Li Zhu,Fanpeng Kong,Chun Cheung,Laleh Najafizadeh.BiCMOS-Based Compensation:Toward Fully Curvature-Corrected Bandgap Reference Circuits[J].IEEE Transactions on Circuits and Systems I:Regular Papers,2018,65(4):1210-1223.
[6]BMa,FYu.Anovel1.2-V4.5-ppm/℃curvature-compensated CMOS bandgap reference[J].IEEE Transactions on Circuits and Systems I:Regular Papers,2014,61(4):1026-1035.
[7]K K Lee,T S Lande,P Hfliger.A sub-μW bandgap reference circuit with an inherent curvature-compensation property[J].IEEE Transactions on Circuits and Systems I:Regular Papers,2015,62(1):1-9.
[8]I Lee,G Kim,W Kim.Exponential curvature-compensated BiCMOS bandgap references[J].IEEE J Solid-State Circuits,1994,29(11):1396-1403.
[9]Ping Luo,Shaowei Zhen,et al.Digital Assistant Power Integrated Technologies for PMU in Scaling CMOS Process[J].IEEE Transactions on Power Electronics,2014,29(7):3798-3807. |