关键词: 电平位移电路, 高速、高共模噪声抗扰, 增强型GaN, 高压半桥栅驱动

Abstract: A high-speed,highcommon-mode noise immunitylevel shiftingcircuit for a GaN-driver with 0.35 μm HV CMOS process is proposed.The level shift circuit uses a high-speed current mirror and dual latch structure,which greatly increases the transmission speed.At the same time,the common mode anti-interference auxiliary circuit is added to the circuit,so the anti-interference ability of the level shift circuit to the common mode noise is improved.The high-speed,high common mode noise immunity level shift circuit is mainly used to drive the high-voltage half-bridge drive of the enhanced GaN.The simulation results show that the level shift circuit has a rising edge transmission delay of 1.03 ns and a falling edge transmission delay of 1.15 ns,which can withstand the GaN high-voltage half-bridge gate drive SW node voltage floating 50 V/ns.

Key words: level shifter, high-speed and high-noise-immunity, enhanced GaN, high-voltage half-bridge drive