GaN HEMT器件封装技术研究进展*

doi:10.16257/j.cnki.1681-1070.2021.0210

摘要/Abstract

摘要： GaN HEMT器件由于其宽禁带材料的独特性能，相比硅功率器件具有击穿场强高、导通电阻低、转换速度快等优势，在智能家电、交直流转换器、光伏逆变器以及电动汽车等领域有着广泛的应用前景。但GaN HEMT器件的高功率密度和高频工作特性，给器件封装带来了极大挑战，要使其出色性能得以充分发挥，其封装结构、材料、工艺等起着至关重要的作用。介绍了GaN HEMT及其组成的功率模块的典型封装结构，并对国内外在寄生电感、热管理等封装关键技术问题的研究现状，以及高导热二维材料石墨烯在GaN HEMT器件热管理中的应用进行了综述。

关键词: GaNHEMT, 封装, 寄生电感, 热管理

Abstract: Due to its unique performance of wide band gap material, GaN HEMT has advantages such as high breakdown field strength, low on-resistance and fast switching speed compared with silicon power devices. GaN HEMT devices have a wide application prospect in intelligent home appliances, AC/DC converters, photovoltaic inverters and electric vehicles, etc. However, the high power density and high frequency working characteristics bring great challenges to the packaging of the devices. In order to achieve their excellent performance, the packaging structures, materials and process play a vital role. In this paper, typical package structures of GaN HEMTs and their power modules are introduced. The global research status of key package technologies such as parasitic inductance, thermal management, and the application of high thermal conductivity two-dimensional material graphene in thermal management of GaN HEMT devices are reviewed.

Key words: GaNHEMT, package, parasiticinductance, thermalmanagement

中图分类号:

TN305.94

鲍婕,周德金,陈珍海,宁仁霞,吴伟东,黄伟. GaN HEMT器件封装技术研究进展^*[J]. 电子与封装, 2021, 21(2): 020101 .

BAO Jie, ZHOU Dejin，CHEN Zhenhai, NING Renxia, NG Wai Tung, HUANG Wei. Research Progress of GaN HEMT PackageTechnology[J]. Electronics & Packaging, 2021, 21(2): 020101 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN HEMT器件封装技术研究进展^*

Research Progress of GaN HEMT PackageTechnology

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