超低功耗复位电路设计

doi:10.16257/j.cnki.1681-1070.2022.0701

电子与封装 ›› 2022, Vol. 22 ›› Issue (7): 070301 . doi: 10.16257/j.cnki.1681-1070.2022.0701

超低功耗复位电路设计

史良俊;袁敏民

无锡力芯微电子股份有限公司，江苏无锡 ?214028

收稿日期:2021-10-20 出版日期:2022-07-28 发布日期:2022-04-14
作者简介:史良俊（1980—），男，江苏溧阳人，硕士，工程师，主要研究方向为模拟集成电路设计。

Design of Ultra-Low PowerReset Circuit

SHI Liangjun, YUAN Minmin

Wuxi Etek Micro-Electronic Co., Ltd.,Wuxi 214028, China

Received:2021-10-20 Online:2022-07-28 Published:2022-04-14

摘要/Abstract

摘要： 提出了一种超低功耗复位电路结构，以微电流源提供偏置，利用器件自身的开启电压为触发点，并通过正反馈进行加速，实现了上电和下电复位功能，3.3 V电源供电时电流小于1 μA，在NMOS和PMOS管阈值电压之和附近产生可靠的复位信号。以华润微电子0.25 μm 5 V工艺实现电路版图并流片，面积小于0.001 mm²，典型复位电压为1.95 V。解决了常用复位电路可靠性低、没有低压复位功能、成本高等问题。

关键词: 超低功耗, 复位电路, 开启电压, 正反馈

Abstract: An ultra-low power reset circuit structure is proposed to realize power-on and power-off reset functions with the micro current source providing bias, the device’s own turn-on voltage as the trigger point, and positive feedback acceleration. The current is less than 1 μA with 3.3 V power supply. A reliable reset signal is generated near the sum of threshold voltages of NMOS and PMOS transistors. The circuit layout and tape-out are carried out by China Resources Microelectronics 0.25 μm 5 V process with an area of less than 0.001 mm² and a typical reset voltage of 1.95 V. It solves the problems of low reliability, no low-voltage reset function and high cost of common reset circuits.

Key words: ultra-lowpower, reset circuit, turn-on voltage, positive feedback

中图分类号:

TN492

史良俊;袁敏民. 超低功耗复位电路设计[J]. 电子与封装, 2022, 22(7): 070301 .

SHI Liangjun, YUAN Minmin. Design of Ultra-Low PowerReset Circuit[J]. Electronics & Packaging, 2022, 22(7): 070301 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

超低功耗复位电路设计

Design of Ultra-Low PowerReset Circuit

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