中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2022, Vol. 22 ›› Issue (7): 070302 . doi: 10.16257/j.cnki.1681-1070.2022.0702

• 电路与系统 • 上一篇    下一篇

片上SRAM物理不可克隆函数特性优化设计

高国平;赵维林   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡? 214072
  • 收稿日期:2021-10-21 出版日期:2022-07-28 发布日期:2022-03-23
  • 作者简介:高国平(1979—),男,浙江嘉善人,本科,高级工程师,现从事各类接口电路设计和可靠性研究工作。

OptimalDesign of Physically Unclonable Function Characteristics of On-Chip SRAM

GAO Guoping, ZHAO Weilin   

  1. China Electronics Technology Group CorporationNo. 58 Research Institute, Wuxi214072, China
  • Received:2021-10-21 Online:2022-07-28 Published:2022-03-23

摘要: 业内常用静态随机存储器(SRAM)物理不可克隆函数(PUF)通过片上SRAM上电初始状态的固有物理特性生成系统安全密钥。但在系统不能充分掉电的情况下,片上集成SRAM上电后保持了上次掉电前的状态,无法生成固有的物理特性密钥。提出了一种在系统不能充分掉电情况下的电源控制电路,确保SRAM单元充分掉电,从而保证片上SRAM上电初始状态的物理特性。

关键词: 静态随机存储器, 物理不可克隆函数, 上下电控制

Abstract: Physically unclonable function (PUF) of static random access memory (SRAM) is commonly used in the industry to generate system security keys through the inherent physical characteristics of the on-chip SRAM power-up initial state. However, in the case that the system cannot be sufficiently powered down, the on-chip integrated SRAM maintains the state before the last power down after being powered up and cannot generate the inherent physical characteristic key. A power control circuit is proposed to ensure the physical characteristics of the on-chip SRAM power-up initial state by ensuring that the SRAM cell is fully powered down when the system cannot be fully powered down.

Key words: SRAM, physically unclonable function, power onand off control

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