GaN HEMT及GaN栅驱动电路在DToF激光雷达中的应用*

doi:10.16257/j.cnki.1681-1070.2023.0022

摘要/Abstract

摘要： DToF（Direct Time-of-Flight）激光雷达通过直接测量激光的飞行时间完成距离测量和地图成像，应用于自动驾驶的DToF激光雷达需要具备更高的分辨率和更宽的检测范围。GaN高电子迁移率晶体管（HEMT）相对于传统Si基功率MOSFET的优异特性使其非常适合应用于自动驾驶中的DToF激光雷达，而GaN HEMT性能的发挥依赖于高速、高驱动能力和高可靠性的GaN栅驱动电路。针对自动驾驶应用中的DToF激光雷达系统，从系统电路到核心元器件，分析了激光二极管驱动电路面临的设计挑战，GaN HEMT的优势以及GaN栅驱动电路面临的设计挑战，并介绍了适合该应用的GaN栅驱动电路。

关键词: DToF激光雷达, 激光二极管驱动电路, GaNHEMT, GaN栅驱动电路

Abstract: Direct time-of-flight (DToF) lidar completes distance measurement and mapping by directly measuring the time of flight of laser, the DToF lidar in autonomous driving applications requires higher resolution and wider detection range. The superior properties of GaN high electron mobility transistor (HEMT) compared to traditional Si-based power MOSFET make them ideal for DToF lidar in autonomous driving, and high-speed, strong-driving-capability and high-reliability GaN gate driver circuit are crucial to give full play to the performance of GaN power device. Based on the DToF lidar systems in autonomous driving applications, from the system circuits to the core devices, the design challenges of laser diode drivers, the advantages of GaN HEMT and the design challenges of GaN driver circuit are analyzed, and GaN gate driver circuit suitable for DToF lidar are introduced.

Key words: DToF lidar, laser diode driver, GaNHEMT, GaN gate driver circuit

中图分类号:

TN431.1

秦尧;明鑫;叶自凯;庄春旺;张波. GaN HEMT及GaN栅驱动电路在DToF激光雷达中的应用^*[J]. 电子与封装, 2023, 23(1): 010103 .

QIN Yao, MING Xin, YE Zikai, ZHUANG Chunwang, ZHANG Bo. Application of GaN HEMT and GaN Gate Driver Circuit inDirect Time-of-Flight Lidar[J]. Electronics & Packaging, 2023, 23(1): 010103 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN HEMT及GaN栅驱动电路在DToF激光雷达中的应用^*

Application of GaN HEMT and GaN Gate Driver Circuit inDirect Time-of-Flight Lidar

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