微波等离子体化学气相沉积法制备大尺寸单晶金刚石的研究进展*

doi:10.16257/j.cnki.1681-1070.2023.0023

摘要/Abstract

摘要： 金刚石作为一种超宽禁带半导体，是下一代功率电子器件和光电子器件最有潜力的材料之一。然而，高品质、大面积（大于2英寸）单晶衬底的制备仍是金刚石器件产业应用亟待解决的问题。介绍了目前受到广泛关注的微波等离子体化学气相沉积法（MPCVD）获得大尺寸金刚石单晶衬底的技术方案，即单颗金刚石生长、拼接生长以及异质外延生长。综述了大尺寸单晶金刚石外延生长及其在电子器件领域应用的研究进展。总结了大尺寸单晶金刚石制备过程中面临的挑战并提出了潜在的解决方案。

关键词: 金刚石, 微波等离子体化学气相沉积法, 三维生长, 拼接生长, 异质外延

Abstract: Diamond, as an ultra-wide band semiconductor, is one of the most promising materials for the next generation of power electronics devices and optoelectronics devices. However, the preparation of high-quality large-area (larger than 2 inch) single-crystal substrates remains a pressing challenge for industrial applications of diamond devices. The technical solutions for obtaining large-size diamond single-crystal materials by microwave plasma chemical vapor deposition (MPCVD), which is currently receiving a lot of attention, are presented, namely, single diamond growth, mosaic growth, and heterogeneous epitaxial growth. The research progress of large-size single-crystal diamond epitaxial growth and its application in the field of electronic devices is reviewed. The challenges of the preparation of large-size single-crystal diamond are summarized and potential solutions are proposed.

Key words: diamond, microwave plasma chemical vapordeposition, three-dimensional growth, mosaic growth, heterogeneous epitaxy

中图分类号:

TN432

牟草源;李根壮;谢文良;王启亮;吕宪义;李柳暗;邹广田. 微波等离子体化学气相沉积法制备大尺寸单晶金刚石的研究进展^*[J]. 电子与封装, 2023, 23(1): 010104 .

MU Caoyuan, LI Genzhuang, XIE Wenliang, WANG Qiliang, LYU Xianyi, LI Liu’an, ZOU Guangtian. Research Progress in Preparation of Large Size Single Crystal Diamond byMicrowave Plasma Chemical Vapor Deposition[J]. Electronics & Packaging, 2023, 23(1): 010104 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

微波等离子体化学气相沉积法制备大尺寸单晶金刚石的研究进展^*

Research Progress in Preparation of Large Size Single Crystal Diamond byMicrowave Plasma Chemical Vapor Deposition

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