中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2023, Vol. 23 ›› Issue (4): 040202 . doi: 10.16257/j.cnki.1681-1070.2023.0029

• 封装、组装与测试 • 上一篇    下一篇

基于热测试芯片的2.5D封装热阻测试技术研究

吕晓瑞;刘建松;黄颖卓;林鹏荣   

  1. 北京微电子技术研究所,北京 100076
  • 收稿日期:2022-08-09 出版日期:2023-04-27 发布日期:2023-04-27
  • 作者简介:吕晓瑞(1985—),女,山西运城人,硕士,高级工程师,主要从事电子元器件结构可靠性分析技术、封装散热设计技术及封装工艺技术的研究工作。

Research on Thermal Resistance Testing Technologyof 2.5D Package Based on Thermal Test Chip

LYU Xiaorui, LIU Jiansong, HUANG Yingzhuo, LIN Pengrong   

  1. Beijing Institute of MicroelectronicsTechnology, Beijing 100076,China
  • Received:2022-08-09 Online:2023-04-27 Published:2023-04-27

摘要: 2.5D多芯片高密度封装中,多热源复杂热流边界、相邻热源热耦合增强,高精准的热阻测试与仿真模拟验证是封装热设计的关键。设计开发了基于百微米级发热模拟单元的热测试验证芯片(TTC),并基于多热点功率驱动电路系统和多通道高速采集温度标测系统,实现了2.5D多芯片实际热生成的等效模拟与芯片温度的多点原位监测。通过将实际热测试结构函数导入热仿真软件,实现了仿真模型参数的拟合校准,采用热阻矩阵法表征多芯片封装热耦合叠加效应,实现了多热源封装热阻等效表征。结果表明,多芯片封装自热阻和耦合热阻均随着芯片功率密度的增加而提高,芯片的热点分布对封装热阻值的影响更为显著,因此模拟实际芯片发热状态、建立等效热仿真模型是实现高精准封装热仿真和散热结构设计的关键。

关键词: 2.5D封装, 多热源, 多芯片封装热阻, 结构函数, 热阻矩阵

Abstract: In 2.5D multi-chip high-density packaging, the complex heat flow boundaries of multiple heat sources and the thermal coupling of adjacent heat sources are enhanced, the high precision thermal resistance test and simulation verificationare key to the thermal design of the package. A thermal test verification chip (TTC) based on a 100-micron heat simulation unit is designed and developed. Based on a multi-spot power driven circuit system and a multi-channel high-speed acquisition temperature mapping system, the equivalent simulation of the actual thermal generation of the 2.5D multi-chip package and the multi-point in situ monitoring of the chip temperature are realized. The actual thermal test structure function is imported into thermal simulation software to achieve the parameter fitting and calibration of simulation model. The thermal coupling superposition effect of multi-chip package is calculated by thermal resistance matrix method, and the equivalent thermal resistance of multi-heat source package is achieved The results show that the self-thermal resistance and coupling thermal resistance of multi-chip package increase with the increase of chip power density, and the influence of hot spot distribution on the package thermal resistance is more significant. Therefore, simulating the heat state of the actual chip and establishing the equivalent thermal simulation model are key to achieve high precision package thermal simulation and heat dissipation structure design.

Key words: 2.5D package, multi-heat sources, thermal resistance of multi-chip package, structure function, thermal resistance matrix

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