GaN HEMT热特性的反射热成像研究*

doi:10.16257/j.cnki.1681-1070.2024.0174

电子与封装 ›› 2024, Vol. 24 ›› Issue (11): 110102 . doi: 10.16257/j.cnki.1681-1070.2024.0174

• ICTC2024（集成电路测试大会）专题 • 上一篇下一篇

GaN HEMT热特性的反射热成像研究^*

刘智珂，曹炳阳

清华大学航天航空学院热科学与动力工程教育部重点实验室，北京 ?100084

收稿日期:2024-10-12 出版日期:2024-11-25 发布日期:2024-11-25
作者简介:刘智珂（1997—），男，山东济南人，博士研究生，主要研究方向为电子器件热输运的反射热成像表征。

Research on Thermal Characteristics of GaN HEMTs Through Thermoreflectance Thermal Imaging

LIU Zhike, CAO Bingyang

KeyLaboratory for Thermal Science and Power Engineering of Ministry of Education,School of Aerospace Engineering, Tsinghua University, Beijing 100084, China

Received:2024-10-12 Online:2024-11-25 Published:2024-11-25

摘要/Abstract

摘要： GaN高电子迁移率晶体管（HEMT）已在电力电子的诸多领域得到广泛应用，但需要解决高功率密度带来的热瓶颈问题。反射热成像是一种具有高空间分辨率的全场温度成像技术，适用于捕捉HEMT的运行温度，从而制定合适的热管理策略。利用反射热成像系统对6种GaN HEMT的场板和漏极温度分布进行了测试，实验与仿真结果偏差在6%以内。通过热阻分析比较了不同衬底厚度和外延设计对器件热特性的影响，衬底热阻占总热阻的比例超过40%，将衬底厚度从100 μm减薄至60 μm，热阻降低8.1%，衬底减薄对于热阻的降低影响显著程度高于外延设计变更。上述结果凸显了反射热成像方法用于指导器件热优化的重要性。

关键词: GaN HEMT, 反射热成像, 温度场, 热优化

Abstract: GaN high electron mobility transistors (HEMTs) have been widely used in various fields of power electronics, but the thermal bottleneck caused by high power density needs to be solved. Thermoreflectance thermal imaging emerges as a technique with high spatial resolution for temperature mapping, and it is suitable for capturing the operational temperature of HEMTs to formulate appropriate thermal management strategies. Temperature distributions of the field plate and drain of six types of GaN HEMTs are tested by thermoreflectance thermal imaging system, and the deviation between experimental and simulation results is within 6%. Thermal resistance analysis is used to compare the effects of different substrate thicknesses and epitaxial designs on thermal performance of devices. The thermal resistance of substrate accounts for more than 40% of the total thermal resistance. When the thickness of substrate is reduced from 100 μm to 60 μm, the thermal resistance is reduced by 8.1%, and the impact of substrate thinning on the reduction of the thermal resistance is significantly greater than that of epitaxial design changes. These above results highlight the importance of thermoreflectance thermal imaging method for guiding thermal optimization of devices.

Key words: GaN HEMT, thermoreflectance thermal imaging, temperature mapping, thermal optimization

中图分类号:

刘智珂，曹炳阳. GaN HEMT热特性的反射热成像研究^*[J]. 电子与封装, 2024, 24(11): 110102 .

LIU Zhike, CAO Bingyang. Research on Thermal Characteristics of GaN HEMTs Through Thermoreflectance Thermal Imaging[J]. Electronics & Packaging, 2024, 24(11): 110102 .

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中国电子学会电子制造与封装技术分会会刊

GaN HEMT热特性的反射热成像研究^*

Research on Thermal Characteristics of GaN HEMTs Through Thermoreflectance Thermal Imaging

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