中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2024, Vol. 24 ›› Issue (3): 030401 . doi: 10.16257/j.cnki.1681-1070.2024.0033

• 材料、器件与工艺 • 上一篇    下一篇

OLED掩模版Mura缺陷分析与改善

束名扬,张玉星,袁卓颖   

  1. 中国电子科技集团公司第五十五研究所,南京 ?211000
  • 收稿日期:2023-09-04 出版日期:2024-03-27 发布日期:2024-03-27
  • 作者简介:束名扬(1990—),男,安徽芜湖人,硕士,工程师,主要研究方向为掩模版制造工艺。

Analysis and Improvement of the Mura Defect in OLED Mask

SHU Mingyang, ZHANG Yuxing, YUAN Zhuoying   

  1. ChinaElectronics Technology Group Corporation No.55 ResearchInstitute, Nanjing 211000, China
  • Received:2023-09-04 Online:2024-03-27 Published:2024-03-27

摘要: Mura缺陷管控作为关键技术指标直接决定着OLED器件的显示画质与良品率。针对OLED掩模版生产过程中发生的Mura缺陷,通过Mura不良分析发现这种缺陷与阵列像素单元邻近辅助图形有关,并在显影工艺后表现出阵列像素单元关键尺寸(CD)不均匀与宏观色差。依据显影工艺分析,基于旋喷式显影模式提出了一种分步显影方案,实验测试分析了显影液流速、旋转速度、纯水流速以及纯水/显影液过渡时间等工艺参数对Mura缺陷的影响。通过优化显影工艺,实现阵列像素单元CD不均匀性优于120 nm,阵列像素单元边缘Mura不良区域由大于3%降低至无视觉可见Mura,结果表明该工艺方案可以显著改善Mura缺陷。

关键词: Mura, OLED, 掩模版, 显影

Abstract: As a key technical index, Mura defect control determines the display quality and the yield of OLED devices directly. For the Mura defects occurring in the production process of OLED mask, it is found that such defects are related to the adjacent auxiliary graphics of array pixel units through Mura defect analysis, and exhibit uneven array pixel unit critical dimensional (CD) and macro color difference after the developing process. According to the analysis of developing process, a step by step developing scheme is proposed based on the rotary spray developing mode, and experimental tests are conducted to analyze the effects of process parameters such as developer flow rate, chuck rotate speed, pure water flow rate, and pure water/developer overlap time to Mura defects. By optimizing the developing process, the CD range of pixel unit arrays is less than 120 nm and the Mura defect area decreases from more than 3% to invisible. The experimental results show that this method can improve the Mura defect noteworthy.

Key words: Mura, OLED, mask, developing

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