关键词: DPC陶瓷基板, 电镀铜层, 表面研磨, 工艺优化, 封装

Abstract: Direct plate copper (DPC) ceramic substrate is widely used for thermal management of power semiconductor devices because of its advantages such as high thermal conductivity/heat resistance, high pattern accuracy and vertical interconnection ability. In the process of producing DPC ceramic substrate, the thickness of plating copper layer, its uniformity and surface roughness have great influence on the quality of substrate and packaging performance of devices. The effects of several grinding techniques on the properties of DPC ceramic substrate are compared and analyzed. The experimental results show that the abrasive belt grinding has high grinding efficiency, but the surface roughness of its copper layer is high, which is only suitable for the coarse grinding process of DPC substrate. The thickness of copper layer processed by CNC grinding and ceramic brush grinding is good and the surface roughness is low, which meets the requirements of flip-chip eutectic bonding of photoelectric devices (usually the roughness is less than 0.3 μm and the thickness range is less than 30 μm). For DPC ceramic substrates with higher surface roughness requirements (less than 0.1 μm), it is necessary to combine grinding process included coarse grinding and chemical mechanical polishing (CMP).

Key words: DPCceramicsubstrate, platingcopper, surfacegrinding, processoptimization, packaging