碳纳米管场效应晶体管重离子单粒子效应研究

doi:10.16257/j.cnki.1681-1070.2024.0002

摘要/Abstract

摘要： 碳纳米管场效应晶体管（CNT FET）具备优良的电学性能和稳定的化学结构，表现出较强的恶劣环境耐受能力，但其抗辐射性能仍缺乏充足的试验验证。以超薄CNT为沟道材料、HfO₂为栅介质层的CNT FET为对象，研究了²⁰⁹Bi重离子辐射引起的器件单粒子效应（SEE）。研究结果表明，在重离子辐射条件下，栅极单粒子瞬态电流大多处于10^-11A数量级，少数达10^-10 A数量级；由于CNT FET具有纳米级超薄CNT沟道，漏极电流对单粒子辐射不敏感，漏极单粒子瞬态电流几乎可以忽略，无单粒子烧毁效应（SEB）；得益于HfO₂栅介质层，CNT FET未发生单粒子栅穿效应（SEGR），表现出较强的抗单粒子能力。

关键词: 碳纳米管, 场效应管, 重离子, 单粒子效应

Abstract: Carbon nanotube filed effect transistors (CNT FETs) have the advantages of excellent electrical performance and stable chemical structure, and exhibit strong tolerance to harsh environments, but their radiation resistance performance still lacks sufficient experimental verification. The single event effect (SEE) induced by ²⁰⁹Bi heavy ion radiation in CNT FETs with ultra-thin CNT as the channel material and HfO₂ as the gate dielectric layer is studied. The results show that under the condition of heavy ion radiation, the single event transient currents of the gate are mostly in the order of 10^-11A, and a few are up to the order of 10^-10A. Because of the nanoscale ultra-thin CNT channel, the drain current of CNT FETs is not sensitive to the single event radiation. The single event transient current of the drain can be almost ignored, and no single event burnout (SEB) is found. Due to the HfO₂ gate dielectric layer, no single event gate rupture (SEGR) is found in CNT FETs, and CNT FETs exhibit strong single event resistance.

Key words: carbon nanotube, filed effect transistors, heavy ion, single event effect

中图分类号:

TN303

翟培卓;王印权;徐何军;郑若成;朱少立. 碳纳米管场效应晶体管重离子单粒子效应研究[J]. 电子与封装, 2024, 24(1): 010401 .

ZHAI Peizhuo, WANG Yinquan, XU Hejun, ZHENG Ruocheng, ZHU Shaoli. Study on Single Event Effect of Heavy Ion in Carbon Nanotube Filed Effect Transistors[J]. Electronics & Packaging, 2024, 24(1): 010401 .

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