关键词: 碳化硅, 结势垒控制肖特基二极管, 绝缘栅双极型晶体管, 混合模块

Abstract: The traditional IGBT module is integrated with PIN-structured Si-based diodes as continuing-current diodes. The switching loss of the diodes is large, and the current and voltage overcharge phenomenon exists when the diode is turned off, which increases the overall power consumption and reduces the reliability of the IGBT module. A 3300 V/1500 A SiC IGBT/SiC JBS hybrid module is developed by using SiC JBS to replace the original Pin-structured Si-based diode in the module.The design method, manufacturing process and test results of the hybrid module are introduced, and the differences of electrical parameters between the traditional Si-based IGBT module and the SiC /SiC JBS hybrid module are compared. Through the calculation of power consumption under the same working condition, the difference of power consumption between the two is compared. The research shows that the switching time and switching energy of the diodes in the Si IGBT/SiC JBS modules are reduced by 91.9%, 98.3% and 62.1% respectively, which reduces the overall power consumption of the hybrid module, eliminates the overcharge of voltage and current, and improves the reliability of the module.

Key words: SiC, JBS, IGBT, hybridmodule