SOI高压LDMOS单粒子烧毁效应机理及脉冲激光模拟研究*

doi:10.16257/j.cnki.1681-1070.2021.1115

电子与封装 ›› 2021, Vol. 21 ›› Issue (11): 110404 . doi: 10.16257/j.cnki.1681-1070.2021.1115

SOI高压LDMOS单粒子烧毁效应机理及脉冲激光模拟研究^*

师锐鑫¹;周锌^1,2;乔明^1,2;王卓¹;李燕妃³

收稿日期:2021-02-16 出版日期:2021-11-24 发布日期:2021-07-16
作者简介:师锐鑫(1995—)，男，河南新乡人，硕士，从事高低压功率器件设计及其抗辐射能力等方面的研究。

Study on Mechanism of SingleEvent Burnout Effect and Pulse Laser Simulation Experiment for High-voltage SOILDMOS

SHI Ruixin¹, ZHOU Xin^1,2, QIAO Ming^1,2,WANG Zhuo¹，LI Yanfei³

1. University ofElectronic Science and Technology of China, Chengdu 611731, China; 2.Institute ofElectronic and Information Engineering in Dongguan, UESTC, Guangdong 523000,China; 3. China Key System & Integrated Circuit Co., Ltd., Wuxi 214072, China

Received:2021-02-16 Online:2021-11-24 Published:2021-07-16

摘要/Abstract

摘要： SOI高压LDMOS作为高压集成电路的核心器件，广泛应用于模拟开关、栅驱动及电源管理电路中。通过TCAD仿真软件，开展SOI高压LDMOS器件的单粒子敏感点及器件烧毁机理研究。器件在重离子的影响下产生大量的离化电荷，并在电场作用下发生漂移运动，从而诱发寄生三极管开启，导致器件发生单粒子烧毁效应而失效。采取脉冲激光对SOI高压LDMOS器件的单粒子敏感点进行辐射试验，试验结果表明脉冲激光能量为2 nJ，SOI高压LDMOS器件未发生单粒子烧毁效应，验证了脉冲激光模拟试验评估SOI LDMOS器件抗单粒子烧毁能力的可行性。

关键词: 单粒子烧毁效应, SOI高压LDMOS, 脉冲激光

Abstract: High-voltage SOI LDMOS, as the core device of high-voltage integrated circuits, which is widely used in analog switch, gate drive and power management. TCAD simulation software is used to study the single-event sensitive point and device burnout mechanism of high-voltage SOI LDMOS devices. A large amount of ionized charges are generated in the device under the influence of heavy ions, and drifting motion occurs under the action of electric field, thereby inducing the parasitic triode to turn on, as a result, the device has a single event burnout effect and fails. A pulsed laser is used to conduct radiation tests on the single-event sensitive points of high-voltage SOI LDMOS devices. The test results showed that the pulsed laser energy was 2 nJ, and the high-voltage SOI LDMOS device do not have a single-event burnout effect, which verified that pulsed laser simulation experiments can evaluate the single-event burnout reinforcement capability of SOI LDMOS devices.

Key words: singleeventburnouteffect, high-voltageSOILDMOS, pulsedlaser

中图分类号:

TN303

师锐鑫;周锌;乔明;王卓;李燕妃. SOI高压LDMOS单粒子烧毁效应机理及脉冲激光模拟研究^*[J]. 电子与封装, 2021, 21(11): 110404 .

SHI Ruixin, ZHOU Xin, QIAO Ming,WANG Zhuo，LI Yanfei. Study on Mechanism of SingleEvent Burnout Effect and Pulse Laser Simulation Experiment for High-voltage SOILDMOS[J]. Electronics & Packaging, 2021, 21(11): 110404 .

参考文献

[1] SHU L, QI C h, GALLOWAY K F, et al. Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser[J]. Microelectronics Reliability, 2021, 116: 113997.
[2] LUU A, MILLER F, POIROT P, et al. SEB characterization of commercial power MOSFETs with backside laser and heavy ions of different ranges[J]. IEEE Transactions on Nuclear Science, 2008, 55(4): 2166-2173.
[3] JOHNSTON A H, SWIFT G M. Breakdown of gate oxides during irradiation with heavy ions[J]. IEEE Transactions on Nuclear Science, 2002, 45(6):2500-2508.
[4] KUBOYAMA S, IKEDA N, et al. Improved model for single-event burnout mechanism[J]. IEEE Transactions on Nuclear Science, 2004, 51(6): 3336-3341.
[5] ZHOU X, YUAN Z Y, SHU L, et al. Total-ionizing-dose irradiation-induced dielectric field enhancement for high-voltage SOI LDMOS[J]. IEEE Electron Device Letters, 2019, PP(4): 1-1.
[6] 李燕妃，吴建伟，顾祥，等. 30 V NLDMOS结构优化及SEB能力提高[J]. 电子与封装, 2018, 18(10):36-39.
[7] JOHNSON G H, PALAU J M, DACHS C, et al. A review of the techniques used for modeling single-event effects in power MOSFETs[J]. IEEE Transactions on Nuclear Science, 1996, 43(2): 546-560.
[8] HARAN A, BARAK J, et al. Mapping of single event burnout in power MOSFETs[J]. IEEE Transactions on Nuclear Science, 2007, 54(6):2488-2494.
[9] 张晨光, 安恒，等. 脉冲激光模拟单粒子效应研究[J]. 核技术, 2020, 43(4):62-67.
[10] LI Y F, ZHU S L, WU J W, et al. Research for radiation-hardened high-voltage SOI LDMOS[J]. Journal of Semiconductors, 2019, 40(5):41-45.
[11] 马阔，乔明，周锌，等. 高压SOI pLDMOS器件电离辐射总剂量效应研究[J]. 电子与封装, 2020, 20(6): 060403.
[12] 黄建国，韩建伟. 脉冲激光模拟单粒子效应的等效LET计算[J]. 中国科学G辑, 2004, 34(6): 601-609.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

SOI高压LDMOS单粒子烧毁效应机理及脉冲激光模拟研究^*

Study on Mechanism of SingleEvent Burnout Effect and Pulse Laser Simulation Experiment for High-voltage SOILDMOS

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