MOSFET器件质量与可靠性的互补表征体系研究

doi:10.16257/j.cnki.1681-1070.2021.1113

摘要/Abstract

摘要： 尺寸缩小效应会导致金属-氧化物半导体场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET）的性能变化，引发质量与可靠性等问题，进而制约微电子器件性能和使用寿命。对插入厚度为5 nm的Al₂O₃帽层结构的nMOSFET器件进行电学性能和低频噪声性能测试，并提取了阈值电压、栅极关态电流、亚阈摆幅、载流子迁移率及迁移率衰减系数等参数。通过分析栅极电压噪声功率谱密度和栅极缺陷密度，建立了MOSFET器件电学表征方法和低频噪声表征方法的互补表征体系。结果表明，栅极结构中插入5 nm Al₂O₃帽层能有效地调制器件的阈值电压，关态泄漏电流密度降低了97%，器件的输出功率提高了26%；但由于Al₂O₃帽层的插入，在栅极氧化物界面处引入了陷阱，导致载流子在界面处的散射几率增大，迁移率降低了49%。

关键词: MOSFET, 伏安特性, 低频噪声, 质量与可靠性, 互补表征体系

Abstract: The size downscaling effect of metal-oxide-semiconductor field-effect transistor (MOSFET) will lead to performance changes, quality and reliability problems, and affect the performance and lifetime of microelectronic devices. The electrical performance and low-frequency noise behaviors of nMOSFET devices with 5 nm Al₂O₃ capping layer are investigated at room temperature. The threshold voltage, gate off-state leakage current, sub-threshold swing, carrier mobility and mobility attenuation coefficient are extracted. By analyzing the power spectral density of the gate voltage noise, the oxide trap density in the gate layer is extracted, and a complementary characterization system of electrical properties method and low-frequency noise method of MOSFET devices is established. The conclusions indicate that the threshold voltage of the nMOSFET device can be modulated effectively by inserting 5 nm Al₂O₃ capping layer. Moreover, the off-state leakage current density is reduced about 97%, and the output power of the devices increased about 26%. However, due to the insertion of Al₂O₃ capping layer, oxide trap exist in the interface of the gate, which increases the scattering probability of the carrier at the interface, resulting in a 49% reduction in mobility.

Key words: MOSFET, I-Vtransferringcharacteristics, low-frequencynoise, qualityandreliability, complementarycharacterizationsystem

中图分类号:

TN432

张阳;王党会;郑俊娜. MOSFET器件质量与可靠性的互补表征体系研究[J]. 电子与封装, 2021, 21(11): 110405 .

ZHANG Yang, WANG Danghui, ZHENG Junna. Study of Complementary Characteristic Systemsfor the Quality and Reliability of MOSFET Devices[J]. Electronics & Packaging, 2021, 21(11): 110405 .

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