玻璃通孔技术研究进展*

doi:10.16257/j.cnki.1681-1070.2021.0401

摘要/Abstract

摘要： 近年来，随着5G、可穿戴设备、智能手机、汽车电子、人工智能等新兴领域蓬勃兴起，集成电路应用正向着多元化应用方向发展，先进三维封装技术也逐渐成为实现电子产品小型化、轻质化、多功能化的重要手段。玻璃通孔(TGV)互连技术具有高频电学特性优异、成本低、工艺流程简单、机械稳定性强等应用优势，在射频器件、微机电系统(MEMS)封装、光电系统集成等领域具有广泛的应用前景。综述了国内外高密度玻璃通孔制作、金属填充、表面高密度布线的研究进展，对玻璃通孔技术特点及其应用进行了总结。

关键词: 玻璃转接板, 玻璃通孔, 金属填充, 高密度布线

Abstract: In recent years, with the booming of 5G, wearable devices, smart phones, automotive electronics, artificial intelligence and other emerging fields, integrated circuit applications are developing towards the direction of diversification, and advanced three-dimension packaging technology has gradually become an important means to achieve miniaturization, lightness and multi-function of electronic products. Through glass via (TGV) technology has the advantages of excellent high-frequency electrical characteristics, low cost, simple process flow, strong mechanical stability and so on, so it has a broad application prospect in RF devices, MEMS packaging, photoelectric system integration and other fields. In this paper, the research progress of the formation of high-density TGVs, metal filling of TGVs and high-density redistribution layer (RDL) technology in china and abroad is reviewed, and the characteristics of TGV technology and its application are summarized.

Key words: glassinterposers, throughglassvia, viafilling, high-densityRDL

中图分类号:

TN305.96

陈力;杨晓锋;于大全. 玻璃通孔技术研究进展^*[J]. 电子与封装, 2021, 21(4): 040101 .

CHEN Li, YANG Xiaofeng, YU Daquan. Developmentof Through Glass Via Technology[J]. Electronics & Packaging, 2021, 21(4): 040101 .

参考文献

[1] BANIJAMALI B, RAMALINGAM S, NAGARAJAN K, et al. Advanced reliability study of TSV interposers and interconnects for the 28 nm technology FPGA[C]//Proceedings of 61th Electronic Components and Technology Conference (ECTC), 2011: 286-290.
[2] T?PPER M, NIDP I, ERXLEBEN R, et al. 3-D thin film interposer based on TGV (Through Glass Vias): An alternative to Si-interposer[C]// Proceedings of 60th Electronic Components and Technology Conference (ECTC), 2010:66-73.
[3] SRIDHARAM V, MIN S, SUNDARAM V, et al. Design and fabrication of bandpass filters in glass interposer with through-package-vias (TPV)[C]//Proceedings of 60th Electronic Components and Technology Conference (ECTC), 2010: 530-535.
[4] SUKUMARAN V, BANDYOPADHYAY T, SUNDARAM V, et al., Low-cost thin glass interposers as a superior alternative to silicon and organic interposers for packaging of 3-D ICs[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2012, 2(9): 1426-1433.
[5] SUKUMARAN V, KUMAR G, RAMACHANDRAN K, et al. Design, fabrication, and characterization of ultrathin 3-D glass interposers with through-package-vias at same pitch as TSVs in silicon[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2014, 4(5): 786-795.
[6] SHR?DER H, BRUSBERG I, ARNDT-STANFENBIEL N, et al. Glass panel processing for electrical and optical packaging[C]//Proceedings of 61th Electronic Components and Technology Conference (ECTC), 2011: 625-633.
[7] KIM C, SENIOR D E, SHOREY A, et al. Through-glass interposer integrated high quality RF components[C]//Proceedings of 64th Electronic Components and Technology Conference (ECTC), 2014: 1103-1109.
[8] RAHIMI A, YOON Y K, Investigated low loss RF passive components on glass interposer technology[C], Proceedings of 65th Electronic Components and Technology Conference (ECTC), 2015: 308-313.
[9] YANG Z, WANG Y, WANG H, et al. High-g MEMS shock threshold sensor integrated on a copper filling through-glass-via (TGV) substrate for surface mount application[C]//Slid-state sensor, Actuators and Microsystems (TRANSDUCERS), Transducers-2015, 18 International Conference on, IEEE, 2015: 291-294.
[10] FINGER C, STIESCH M, EISENBURGER M, et al. Effect of sandblasting on the surface roughness and residual stress of 3Y-TZP (zirconia)[J]. SN Applied Sciences, 2020, 2(10): 1-8.
[11] BECHIKH A, KLINKOVA O, MAALEJ Y, et al. Sandblasting parameter variation effect on galvanized steel surface chemical composition, roughness and free energy[J]. International Journal of Adhesion and Adhesives, 2020, 102: 102653.
[12] Apex glass technology[EB/OL]. [2020-11-05]. http://www.3dglasssolutions.com/apex-glass/Apex-glass-
technology/.
[13] 林来存, 王启东, 于大全, 等. 基于光敏玻璃的垂直互连通孔仿真与电镀工艺研究[J]. 北京理工大学学报, 2018, 38(1), 52-57.
[14] TAKASHASHI S, HORIUCHI K, TATSUKOSHI K, et al. Development of through glass via (TGV) formation technology using electrical discharging for 2.5/3D integrated packaging[C]//Proceedings of 63th Electronic Components and Technology Conference (ECTC), 2013: 348-352.
[15] LIN L, JING X, LIU F, et al . Deep dry etching of fused silica using C4F8/Ar inductively coupled plasmas[J]. Journal of Materials Science Materials in Electronics, 2016, 28(1): 1-7.
[16] SUKUMARAN V, CHEN Q, LIU F H, et al., Through-package-via formation and metallization of glass interposers[C]//Proceedings of 60th Electronic Components and Technology Conference (ECTC), 2010: 557-563.
[17] ARAB J, KANNOJIA H K, DIXIT P. Effect of tool electrode roughness on the geometric characteristics of through-holes formed by ECDM[J], Precision Engineering, 2019, 60:437-447.
[18] WüTHRICH R, FASCIO V. Machining of nonconducting materials using electrochemical discharge phenomenon—An overview[J]. International Journal of Machine Tools and Manufacture, 2005, 45(9): 1095-1108.
[19] JALALI M, MAILLARD P, WüTHRICH R. Toward a better understanding of glass gravity-feed micro-hole drilling with electrochemical discharges[J], Journal of Micromechanics Microengineering, 2009, 19(4): 045001.
[20] OSTHOLT R, AMBROSIUS N, KRüGER R A. High speed through glass via manufacturing technology for interposer[C]//2014 Electronics System-Integration Technology Conference (ESTC), 2014: 1-3.
[21] CHEN L, WU H, YU D Q, et al. Development of laser-induced deep etching process for through glass via[C]// Proceedings of 20th International Conference on Electronic Packaging Technology(ICEPT), 2019: 1-4.
[22] LEE C K, CHIEN C H, CHIANG C W, et al. Investigation of the process for glass interposer[C]//Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013: 194-197.
[23] CHIEN C H, YU H, LEE C K, et al. Performance and process characteristic of glass interposer with through-glass-via (TGV)[C]//3D System Integration Conference (3DIC), IEEE International, 2013: 1-7.
[24] WEI T, WANG Q, CAI J, et al. Performance and reliability study of TGV interposer in 3D integration[C]//Electronics Packaging Technology Conference (EPTC), IEEE 16th,2014: 601-605.
[25] FU H, HUNEGNAW S, LIU Z M, et al. Adhesive enabling technology for directly plating copper onto glass/ceramic substrates[C]//Microsystems, Packaging, Assembly & Circuits Technology Conference. IEEE, 2014: 1652-1655.
[26] LIU Z, FU H, HUNEGNAW S, et al. Electroless and electrolytic copper plating of glass interposer combined with metal oxide adhesion layer for manufacturing 3D RF devices[C]// Proceedings of 66th Electronic Components & Technology Conference (ECTC), 2016: 62-67.
[27] HUANG T B, CHOU B, TONG J L, et al. Via-first process to enable copper metallization of glass interposers with high-aspect-ratio, fine-pitch through-package-vias[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2017, 7(4): 544-551.
[28] VISWANATHAN S, OGAWA T, DEMIR K, et al. High Frequency Electrical Performance and Thermo-Mechanical Reliability of Fine- Pitch, Copper - Metallized Through-Package-Vias (TPVs) in ultra – thin glass interposers[C]// Proceedings of 67th Electronic Components & Technology Conference (ECTC), 2017: 1510-1516.
[29] ONITAKE S, INOUE K, TAKAYAMA M, et al. TGV (thru-glass via) metallization by direct cu plating on glass[C]//Proceedings of 66th Electronic Components & Technology Conference (ECTC), 2016: 1316-1321.
[30] LIU F, NAIR C, TUMMALA R, Advances in embedded traces for 1.5 μm RDL on 2.5D glass interposers[C]// Proceedings of 65th Electronic Components and Technology Conference (ECTC), 2015: 1736-1741.
[31] LU H, WEI F, FURUYA R, et al. Advances in panel scalable planarization and high throughput differential seed layer etching processes for multilayer RDL at 20 micron I/O pitch for 2.5D glass interposers[C]//Proceedings of 66th Electronic Components and Technology Conference (ECTC), 2016: 2210-2215.
[32] SRIDHARAN V, MIN S, SUNDARAM V, et al., Design and fabrication of bandpass filters in glass interposer with through-package-vias (TPV)[C]//Proceedings of 60th Electronic Components and Technology Conference (ECTC), 2010: 530-535.
[33] CHEN M H, CHIANG T H, ZHANG J H, et al., Panel-based integrated passive device for RF application[C]//Proceedings of 67th Electronic Components and Technology Conference (ECTC), 2017: 185-189.
[34] LEE T C, CHANG Y S, HSU C M, et al. Glass Based 3D-IPD Integrated RF ASIC in WLCSP[C]//Proceedings of 67th Electronic Components and Technology Conference (ECTC), 2017: 631-636.
[35] SHI T, BUCH C, SMET V, et al. First demonstration of panel glass fan-out (GFO) packages for high I/O density and high frequency multi-chip integration[C]//Proceedings of 67th Electronic Components and Technology Conference (ECTC), 2017: 41-46.
[36] YU T, ZHANG X D, YU D Q, et al. Development of embedded glass wafer fan-out package with 2D antenna arrays for 77 GHz millimeter-wave chip[C]//Proceedings of 70th Electronic Components and Technology Conference (ECTC),2020: 31-36.
[37] WATANABE A O, ALI M, ZHANG R, et al. Glass-based IC-embedded antenna-integrated packages for 28-GHz high-speed data communications[C]//Proceedings of 70th Electronic Components and Technology Conference (ECTC), 2020: 89-94.
[38] LEE J, LEE S, PARK J. Wafer level packaging for RF MEMS devices using void free copper filled through glass via[C]//2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), Taipei, 2013: 773-776.
[39] MA S L, REN K, XIA Y M, et al. Process development of a new TGV interposer for wafer level package of inertial MEMS device[C]// Proceedings of 17th International Conference on Electronic Packaging Technology (ICEPT), Wuhan, 2016: 983-987.
[40] LAAKSO MJ, BLEIKER S J, LILJEHOLM J, et al. Through-glass vias for glass interposers and MEMS packaging applications fabricated using magnetic assembly of microscale metal wires[J]. IEEE Access, 2018: 44306-44317.
[41] 吴亚祥, 喻甜, 徐佳帅，等.面向5G/6G高速通信的基于先进封装与微纳制造技术的高效能太赫兹阵列天线[R].第十五届中国研究生电子设计竞赛技术, 2020.
[42] HWANGBO S, YOON Y, SHOREY A B. Millimeter-wave wireless chip-to-chip (C2C) communications in 3D system-in-packaging (SiP) using compact through glass via (TGV)-integrated antennas[C]//Proceedings of 68th Electronic Components and Technology Conference (ECTC), 2018: 2074-2079.
[43] IWAI T, SAKAI T, MIZUTANI D, et al. A novel inorganic substrate by three dimensionally stacked glass core technology[C]//Proceedings of 68th Electronic Components and Technology Conference (ECTC), 2018: 1987-1992.
[44] IWAI T, SAKAI T, FUJISAKI H, et al. Multilayer glass substrate with high density via structure for all inorganic multi-chip module[C]//Proceedings of 69th Electronic Components and Technology Conference (ECTC), 2019:1952-1957.
[45] T?PPER M, NDIP I, ERXLEBEN R, et al. 3-D thin film interposer based on TGV (through glass vias): an alternative to Si-interposer[C]//Proceedings of 60th Electronic Components and Technology Conference (ECTC), 2010: 66-73.
[46] BRUSBERG L, SCHR?DER H, RANZINGER C, et al. Thin glass based electro-optical circuit board (EOCB) with through glass vias, gradient-index multimode optical waveguides and collimated beam mid-board coupling interfaces[C]//Proceedings of Electronic Components and Technology Conference (ECTC), 2015: 789-798.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

玻璃通孔技术研究进展^*

Developmentof Through Glass Via Technology

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