增强型GaN HEMT器件的实现方法与研究进展*

doi:10.16257/j.cnki.1681-1070.2022.1003

摘要/Abstract

摘要： 考虑到实际应用对可靠性、设计成本及能耗的要求，增强型GaN高电子迁移率晶体管（HEMT）器件比传统耗尽型GaN HEMT器件优势更显著。目前有许多方法可以实现增强型GaN HEMT器件，如使用p型栅技术、凹栅结构、共源共栅（Cascode）结构、氟离子体处理法、薄势垒AlGaN层以及它们的改进结构等。分别对使用以上方法制备的增强型GaN HEMT器件进行了综述，并对增强型GaN HEMT器件的最新研究进展进行了总结，探索未来增强型GaN HEMT器件的发展方向。

关键词: GaNHEMT器件, 凹栅结构, p-GaN, 薄势垒

Abstract: Considering the requirements of reliability, design cost and low energy consumption in practical applications, enhanced GaN-based high electron mobility transistor (HEMT) devices have more significant advantages than traditional depletion GaN HEMT devices. At present, there are many ways to realize enhanced GaN HEMT devices, such as using p-type gate technology, recessed gate structure, cascode structure, fluorine ion treatment, thin barrier AlGaN layer and their improved structures. Enhanced GaN HEMT devices prepared by the above methods are reviewed respectively, and the latest research progress of enhanced GaN HEMT devices is summarized, and the further improvement direction of enhanced GaN HEMT devices is explored.

Key words: GaN HEMT devices, recessed gate structure, p-GaN, thin barrier

中图分类号:

TN323⁺.2

穆昌根, 党睿, 袁鹏, 陈大正. 增强型GaN HEMT器件的实现方法与研究进展^*[J]. 电子与封装, 2022, 22(10): 100401 .

MU Changgen, DANG Rui, YUAN Peng, CHENG Dazheng. Implementation Methods and Research Progress of Enhanced GaN HEMTDevices[J]. Electronics & Packaging, 2022, 22(10): 100401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

增强型GaN HEMT器件的实现方法与研究进展^*

Implementation Methods and Research Progress of Enhanced GaN HEMTDevices

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