高压SiC MOSFET研究现状与展望

doi:10.16257/j.cnki.1681-1070.2023.0049

摘要/Abstract

摘要： 碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）作为宽禁带半导体单极型功率器件，具有频率高、耐压高、效率高等优势，在高压应用领域需求广泛，具有巨大的研究价值。回顾了高压SiC MOSFET器件的发展历程和前沿技术进展，总结了进一步提高器件品质因数的元胞优化结构，介绍了针对高压器件的几种终端结构及其发展现状，对高压SiC MOSFET器件存在的瓶颈和挑战进行了讨论。

关键词: SiC, MOSFET, 品质因数, 终端结构

Abstract: Silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) as a wide band semiconductor unipolar power devices, with high frequency, high withstand voltage, high efficiency, high demand in high-voltage applications, has great research value. The development history and latest technology progress of high-voltage SiC MOSFET devices are reviewed, cell optimization structures to further improve the device quality factor are summarized, several edge termination structures for high-voltage devices and their development status are introduced, and limits and challenges of high-voltage SiC MOSFET devices are discussed.

Key words: SiC, MOSFET, figure of merit, edge termination structure

中图分类号:

TN386.1

孙培元;孙立杰;薛哲;佘晓亮;韩若麟;吴宇薇;王来利;张峰. 高压SiC MOSFET研究现状与展望[J]. 电子与封装, 2023, 23(1): 010111 .

SUN Peiyuan, SUN Lijie, XUE Zhe, SHE Xiaoliang, HAN Ruolin, WU Yuwei, WANG Laili, ZHANG Feng. Status and Prospect of High-VoltageSiC MOSFET[J]. Electronics & Packaging, 2023, 23(1): 010111 .

参考文献

[1] WANG F, JI S Q. Benefits of high-voltage SiC-based power electronics in medium-voltage power-distribution grids[J]. Chinese Journal of Electrical Engineering, 2021, 7(1): 1-26.
[2] RYU S H, KRISHNASWAMI S, HULL B, et al. 10 kV, 5 A 4H-SiC power DMOSFET[C]// Proceedings of the 2006 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2006: 1-4.
[3] HARADA S, KATO M, KOJIMA T, et al. Determination of optimum structure of 4H-SiC trench MOSFET[C]// Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012: 253-256.
[4] ALLEN S, PALA V, VANBRUNT E, et al. Next-generation planar SiC MOSFETs from 900 V to 15 kV[J]. Materials Science Forum, 2015, 821-823: 701-704.
[5] WADA K, UCHIDA K, KIMURA R, et al. Blocking characteristics of 2.2 kV and 3.3 kV-class 4H-SiC MOSFETs with Improved doping control for edge termination[C]// Proceedings of the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM), 2014: 915-918.
[6] CASADY J B, PALA V, LICHTENWALNER D J, et al. New generation 10 kV SiC power MOSFET and diodes for industrial applications[C]// PCIM Europe-International Exhibition and Conference for Power Electronics, 2015: 96-103.
[7] SABRI S, BRUNT V E, BARKLEY A, et al. New generation 6.5 kV SiC Power MOSFET[C]// Proceedings of the 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2017: 246-250.
[8] KAWAHARA K, HINO S, SADAMATSU K, et al. 6.5 kV Schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module[C]// Proceedings of the 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2017. 41-4.
[9] ARANGO Y, ROMANO G, MIHAILA A, et al. 6.5kV silicon carbide MOSFETs with 5 kV RB safe operating area and MOS-channel surge capability[C]// Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020: 230-233.
[10] LI S Y, LIU H, HUANG R H, et al. Simulation, fabrication and characterization of 6500 V 4H-SiC power DMOSFETs[C]// Proceedings of the 14th China International Forum on Solid State Lighting China (SSLChina) / International Forum on Wide Bandgap Semiconductors (IFWS), 2017: 144-147.
[11] DENG X C, TAN B, LI J T, et al. Design, Fabrication and characterization of ultra-high voltage 4H-SiC MOSFET transistors[C]// Proceedings of the 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018: 856-858.
[12] 盛况，任娜，徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6): 1741-1753.
[13] 张波, 章文通, 蒲松, 等. 超结功率半导体器件[J]. 微纳电子与智能制造, 2019, 1(1): 5-19.
[14] SOMETANI M, OOZONO K, JI S, et al. Comparative study of performance of SiC SJ-MOSFETs formed by multi-epitaxial growth and trench-filling epitaxial growth[C]// Proceedings of the 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022: 337-340.
[15] ZHONG X Q, WANG B Z, WANG J, et al. Experimental demonstration and analysis of a 1.35-kV 0.92-mΩ·cm2 SiC superjunction Schottky diode[J]. IEEE Transactions on Electron Devices, 2018, 65(4): 1458-1465.
[16] 张跃, 黄润华, 柏松. 一种改进型4H-SiC超结UMOS器件[J]. 电源学报, 2022: 1-8.
[17] KOSUGI R, JI S Y, MOCHIZUKI K, et al. Breaking the theoretical limit of 6.5 kV-Class 4H-SiC super-junction (SJ) MOSFETs by trench-filling epitaxial growth[C]// Proceedings of the 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019: 39-42.
[18] MASUDA T, HATAYAMA T, HARADA S, et al. Edge termination design with strong process robustness for 1.2 kV-class 4H-SiC super junction V-groove MOSFETs[C]// Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020: 166-169.
[19] KIM D Y, YUN N, JANG S Y, et al. An inclusive structural analysis on the design of 1.2 kV 4H-SiC planar MOSFETs[J]. IEEE Journal of the Electron Devices Society, 2021, 9: 804-812.
[20] ZHOU X T, YUE R F, DAI G, et al. An improved structure to enhance the robustness of SiC power MOSFETs for a low Ron, sp[C]// Proceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2016: 116-119.
[21] YUN N, LYNCH J, DEBOER S, et al. Critical design considerations for static and dynamic performances on 6.5 kV 4H-SiC MOSFETs fabricated in a 6-inch SiC foundry[C]// Proceedings of the 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021: 361-365.
[22] 文译. 超高压SiC功率器件新结构与实验研究[D]. 成都：电子科技大学, 2021.
[23] CHEON J, KIM K. 3.3kV 4H-SiC semi-SJ MOSFET for low on-resistance and switching loss[C]// Proceedings of the 2020 International Conference on Electronics, Information, and Communication (ICEIC), 2020: 1-6.
[24] SHEN Z W, ZHANG F, YAN G G, et al. Simulation of a short-channel 4H-SiC UMOSFET with buried p epilayer for low oxide electric field and switching loss[C]// Proceedings of the 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2018: 118-22.
[25] MASUDA T, KOSUGI R, HIYOSHI T. 0.97 mΩcm2/820 V 4H-SiC super junction V-groove trench MOSFET[C]// Proceedings of the 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2016.
[26] ZHANG Q J, WANG G, DOAN H, et al. Latest results on 1200 V 4H-SiC CIMOSFETs with Rsp, on of 3.9 mΩ·cm2 at 150 ℃[C]// Proceedings of the 2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015: 89-92.
[27] YOON J, KIM K. A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance[J]. Journal of Semiconductors, 2021, 42(6): 062803.
[28] YU H Y, WANG J, LIANG S W, et al. 1.2-kV silicon carbide planar split-gate MOSFET with source field plate for superior figure-of-merits[J]. IET Power Electronics, 2022, 15: 1502-1510.
[29] LYNCH J, YUN N, MORGAN A J, et al. Demonstration of high voltage (15kV) split-gate 4H-SiC MOSFETs[C]// Proceedings of the 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021: 95-100.
[30] AGARWAL A, BALIGA B J. Performance enhancement of 2.3 kV 4H-SiC planar-gate MOSFETs using reduced gate oxide thickness[J]. IEEE Transactions on Electron Devices, 2021, 68(10): 5029-5033.
[31] YANG T T, WANG Y, YUE R F. SiC trench MOSFET with reduced switching loss and increased short-circuit capability[J]. IEEE Transactions on Electron Devices, 2020, 67(9): 3685-3690.
[32] YANG H, HU S D, RAN S L, et al. Simulative researching of a 1200 V SiC trench MOSFET with an enhanced vertical resurf effect[J]. IEEE Journal of the Electron Devices Society, 2020, 8: 1335-1338.
[33] JIANG J Y, HUANG C F, WU T L, et al. Simulation study of 4H-SiC trench MOSFETs with various gate structures[C]// Proceedings of the 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019: 401-403.
[34] ZHANG D C, DUC J, HULL B, et al. CIMOSFET: A new MOSFET on SiC with a superior Ron·Qgd figure of merit[J]. Materials Science Forum, 2015, 821-823: 765-768.
[35] HAN Z L, SONG G, BAI Y, et al. A novel 4H-SiC MOSFET For Lw switching loss and high-reliability applications[J]. Semiconductor Science and Technology, 2020, 35(8): 085017.
[36] 路晓飞. 超高压碳化硅MOSFET晶体管及其特性研究[D]. 成都：电子科技大学, 2020.
[37] WEN Y, XU X, ZHU H, et al. Design and characteristics of an etching field limiting ring for 10 kV SiC power device[C]// Proceedings of the 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2019: 37-41.
[38] ZOU X, YUE R F, WANG Y, et al. Etched junction termination extension with floating guard rings and middle rings for ultrahigh-voltage 4H-SiC PiN diodes[C]// Proceedings of the IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2016: 418-421.
[39] KAJI N, NIWA H, SUDA J, et al. Ultrahigh-voltage SiC p-i-n diodes with improved forward characteristics[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 374-381.
[40] WEN Y, XU X J, TAO M L, et al. Characterization and fabrication of the CFM-JTE for 4H-SiC power device with high-efficiency protection and increased JTE dose tolerance window[J]. Nanoscale Research Letters, 2020, 15(1): 211.
[41] DAI T, ZHANG L, VAVASOUR O J, et al. A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices[J]. IEEE Transactions on Electron Devices, 2021, 68(3): 1162-1167.
[42] ZHOU K, LI L, LI Z, et al. Ultralow angle bevel-etched junction termination extension for high voltage SiC power devices[C]// Proceedings of the 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2018: 140-143.
[43] JOHANNESSON D, NAWAZ M, NEE H P. Assessment of junction termination extension structures for ultrahigh-voltage silicon carbide Pin-diodes; a simulation study[J]. IEEE Open Journal of Power Electronics, 2021, 2(1): 304-314.
[44] DENG X, XU X, LI X, et al. A novel SiC MOSFET embedding low barrier diode with enhanced third quadrant and switching performance[J]. IEEE Electron Device Letters, 2020, 41(10): 1472-1475.
[45] LI P, MA R Y, SHEN J, et al. A novel SiC MOSFET with a fully depleted P-base MOS-channel diode for enhanced third quadrant performance[J]. IEEE Transactions on Electron Devices, 2022, 69(8): 4438-4443.
[46] KONO H, ASABA S, OHASHI T, et al. Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-Embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization[C]// Proceedings of the 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021: 227-230.
[47] GODIGNON P, SOLER V, CABELLO M, et al. New trends in high voltage MOSFET based on wide band gap materials[C]// Proceedings of the 2017 International Semiconductor Conference (CAS), 2017: 3-10.
[48] LELIS A J, GREEN R, HABERSAT D B, et al. Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 316-323.
[49] PUSCHKARSKY K, GRASSER T, AICHINGER T, et al. Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability[J]. IEEE Transactions on Electron Devices, 2019, 66(11): 4604-4616.
[50] 白志强, 张玉明, 汤晓燕, 等. 4H-SiC功率MOSFET可靠性研究进展[J]. 电子与封装, 2022, 22(4): 040101.
[51] KIM D, MORGAN A J, YUN N, et al. Non-isothermal simulations to optimize SiC MOSFETs for enhanced short-circuit ruggedness[C]// Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS), 2020: 1-6.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊