中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2024, Vol. 24 ›› Issue (12): 120201 . doi: 10.16257/j.cnki.1681-1070.2024.0162

• 封装、组装与测试 • 上一篇    下一篇

基于SVR数据驱动模型的SiC功率器件关键互连结构热疲劳寿命预测研究*

于鹏举,代岩伟,秦飞   

  1. 北京工业大学电子封装技术与可靠性研究所,北京 100124
  • 收稿日期:2024-03-22 出版日期:2024-12-25 发布日期:2024-12-25
  • 作者简介:于鹏举(2000—),男,河北沧州人,硕士,主要研究方向为电子封装技术与可靠性。

Research on Thermal Fatigue Life Prediction of Key Interconnect Structures of SiC Power Devices Based on SVR Data-Driven Model

YU Pengju, DAI Yanwei, QIN Fei   

  1. Institute of Electronics Packaging Technology and Reliability,Beijing University of Technology, Beijing 100124, China
  • Received:2024-03-22 Online:2024-12-25 Published:2024-12-25

摘要: 烧结纳米银的互连可靠性对于SiC模块至关重要。随着人工智能与封装可靠性领域的交叉研究不断深入,发展基于数据驱动的互连可靠性评价方法已经成为该领域研究的前沿问题之一。以典型SiC互连结构为研究对象,将热疲劳寿命作为评价指标,通过综合研究芯片尺寸、烧结纳米银层尺寸和力学参数等关键因素,构建了基于支持向量回归(SVR)模型的烧结纳米银热疲劳寿命数据驱动预测模型,并对所提出的数据驱动模型进行综合量化考察和验证。通过研究关键互连参数的相关性矩阵,发现增加烧结银层厚度可以提高互连结构的寿命,而烧结银层弹性模量和SiC芯片厚度对互连可靠性有不利影响,该研究结果可用于指导SiC互连层的优化设计。

关键词: 封装技术, 功率模块, 烧结纳米银, 疲劳寿命, 机器学习

Abstract: Interconnect reliability of sintered nano silver is critical for SiC modules. With the deepening of the cross-research between artificial intelligence and packaging reliability, the development of data-driven interconnection reliability evaluation methods has become one of the forefront issues in this field. Taking the typical SiC interconnect structure as the research object, the thermal fatigue life is used as the evaluation index, and the key factors such as chip size, sintered nano silver layer size and mechanical parameters are comprehensively studied, a data-driven prediction model for thermal fatigue life of sintered nano silver based on support vector regression (SVR) model is constructed, and the proposed data-driven model is quantitatively examined and verified comprehensively. By studying the correlation matrix of key interconnect parameters, it is found that increasing the thickness of sintered silver layer can improve the life of interconnect structure, and the elastic modulus of sintered silver and the thickness of SiC chip have adverse effects on the interconnect reliability. The research results can be used to guide the optimization design of SiC interconnect layer.

Key words: packaging technology, power module, sintered nano silver, fatigue life, machine learning

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