中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2025, Vol. 25 ›› Issue (10): 100403 . doi: 10.16257/j.cnki.1681-1070.2025.0123

• 材料、器件与工艺 • 上一篇    下一篇

一种基于LTCC技术的低频小尺寸3 dB电桥*

马涛1,2,王慷1,2,聂梦文1,2,潘园园1,2   

  1. 1. 中国电子科技集团公司第四十三研究所,合肥 230088;2. 微系统安徽省重点实验室,合肥 230088
  • 收稿日期:2025-01-02 出版日期:2025-10-29 发布日期:2025-10-29
  • 作者简介:马涛(1981—),男,安徽铜陵人,硕士,高级工程师,主要从事电子材料、陶瓷封装等相关技术研究。

Low-Frequency Small-Sized 3 dB Bridge Based on LTCC Technology

MAO Tao1,2, WANG Kang1,2, NIE Mengwen1,2, PAN Yuanyuan1,2   

  1. 1. China Electronics Technology Group CorporationNo.43 Research Institute, Hefei 230088, China; 2. Anhui KeyLaboratory of Microsystems, Hefei230088, China
  • Received:2025-01-02 Online:2025-10-29 Published:2025-10-29

摘要: 3 dB电桥在通信系统广泛应用于微波信号合成与分配。针对小型化和低频应用需求,利用低温共烧陶瓷工艺开发一款低频小尺寸电桥。采用宽边耦合结构实现3 dB耦合,并调整线宽实现驻波比和隔离的均衡;采用螺旋和三维绕线结构实现小型化;引入耦合线对地结构进一步降低应用频率。采用标准1206封装,测试结果与仿真结果吻合,通带为330~580 MHz,插入损耗≤1.3 dB,驻波比≤1.5,隔离度≥17.9 dB,幅度不平衡度≤1.2 dB,相位不平衡度≤5°。

关键词: 3 dB电桥, LTCC, 低频, 宽边耦合

Abstract: The 3 dB bridge is widely used in communication systems for microwave signal synthesis and distribution. To meet demands for miniaturization and low-frequency applications, a low-frequency and compact bridge was developed using low-temperature co-fired ceramic technology. 3 dB coupling is achieved by a broadside coupling structure, with the standing wave ratio and isolation balanced by line width adjustments. Miniaturization is accomplished through spiral and 3D wire-winding structures. A coupled line-to-ground structure is introduced to further lower the operating frequency. The device is packaged in a standard 1206 package. Measured results demonstrate good agreement with simulations, exhibiting a passband from 330 MHz to 580 MHz, with an insertion loss of ≤1.3 dB, a standing wave ratio of ≤1.5, an isolation of ≥17.9 dB, an amplitude imbalance of ≤1.2 dB, and a phase imbalance of ≤5°.

Key words: 3 dB bridge, LTCC, low frequency, broadside coupling structure

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