基于晶体塑性有限元的铜-铜键合结构热疲劳行为研究

doi:10.16257/j.cnki.1681-1070.2026.0001

摘要/Abstract

摘要： 在后摩尔时代，先进三维封装是实现芯片计算能力和存储密度持续提升的重要出路。铜-铜（Cu-Cu）键合是三维封装的关键技术，一种常见的失效模式是材料间热膨胀系数失配引发的热应力问题。基于晶体塑性理论，建立了一个考虑温度效应的本构模型，并对参数进行校准。基于Voronoi算法，建立了Cu-Cu键合的三维代表性体积单元模型，引入累积塑性应变能密度作为疲劳指标参数，用于预测疲劳裂纹萌生。结果表明，几何不连续性与位错塞积效应都会造成应力集中，且两者存在协同增强作用。累积塑性应变能密度可以对Cu-Cu键合的4种破坏位置实现有效预测，键合界面中的杂质/缺陷会加速Cu-Cu键合失效。

关键词: 先进三维封装, 铜-铜键合, 晶体塑性, 有限元分析, 热疲劳

Abstract: In the post-Moore's Law era, advanced 3D packaging is an important way to achieve continuous improvement in chip computing power and storage density. Cu-Cu bonding is a critical technology in 3D packaging, and one of its common failure modes is the thermal stress problem caused by the mismatch in coefficient of thermal expansion (CTE) between materials. Based on the crystal plasticity theory, a temperature effects constitutive model is developed and the parameters are calibrated. Based on the Voronoi algorithm, a 3D representative volume element (RVE) model of the Cu-Cu bonding is established, and the cumulative plastic strain energy density is introduced as a fatigue indicator parameter (FIP) to predict the fatigue crack initiation. The results show that both geometric discontinuities and dislocation pile-up effect can cause stress concentration, and there is a synergistic enhancement effect between them. The cumulative plastic strain energy density can effectively predict the four failure locations of Cu-Cu bonding, while impurities/defects in the bonding interface can accelerate the failure of Cu-Cu bonding.

Key words: advanced 3D packaging, Cu-Cu bonding, crystal plasticity, finite element analysis, thermal fatigue

中图分类号:

TN305.94

周聪林，雷鸣奇，姚尧. 基于晶体塑性有限元的铜-铜键合结构热疲劳行为研究[J]. 电子与封装, 2026, 26(1): 010201 .

ZHOU Conglin, LEI Mingqi, YAO Yao. Investigation of Thermal Fatigue Behavior in Cu-Cu Bonding Structures Based on Crystal Plasticity Finite Element Method[J]. Electronics & Packaging, 2026, 26(1): 010201 .

参考文献

[1] ARNAUD L, KARAM C, BRESSON N, et al. Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking[J]. MRS Communications, 2020, 10(4): 549-557.
[2] WU S Y, CHANG C H, CHIANG M C, et al. A 3nm CMOS FinFlexTM platform technology with enhanced power efficiency and performance for mobile SoC and high performance computing applications[C]// 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA. New York: IEEE, 2022: 639-642.
[3] 牛帆帆, 杨舒涵, 康秋实, 等. 面向三维集成的等离子体活化键合研究进展[J]. 电子与封装, 2023, 23(3): 030105.
[4] 张明辉, 高丽茵, 刘志权, 等. 先进封装铜-铜直接键合技术的研究进展[J]. 电子与封装, 2023, 23(3): 030106.
[5] 陈桂，邵云皓，屈新萍. 三维集成铜-铜低温键合技术的研究进展[J]. 电子与封装，2025, 25(5): 050106.
[6] PANCHENKO I, WENZEL L, MUELLER M, et al. Microstructure development of Cu/SiO? hybrid bond interconnects after reliability tests[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2022, 12(3): 410-421.
[7] ONG J J, TRAN D P, LAN M C, et al. Enhancement of fatigue resistance by recrystallization and grain growth to eliminate bonding interfaces in Cu–Cu joints[J]. Scientific Reports, 2022, 12(1): 13116.
[8] SHIE K C, HSU P N, Li Y J, et al. Failure mechanisms of Cu-Cu bumps under thermal cycling[J]. Materials, 2021, 14(19): 5522.
[9] MIRKARIMI L, UZOH C, SUWITO D, et al. The influence of Cu microstructure on thermal budget in hybrid bonding[C]// 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC), San Diego, CA, USA, 2022: 162-167.
[10] 章海明, 徐帅, 李倩, 等. 晶体塑性理论及模拟研究进展[J]. 塑性工程学报, 2020, 27(5): 12-32.
[11] HILL R, RICE J R. Constitutive analysis of elastic-plastic crystals at arbitrary strain[J]. Journal of the Mechanics and Physics of Solids, 1972, 20(6): 401-413.
[12] ASARO R J, RICE J R. Strain localization in ductile single crystals[J]. Journal of the Mechanics and Physics of Solids, 1977, 25(5): 309-338.
[13] LEDBETTER H M, NAIMON E R. Elastic properties of metals and alloys. II. Copper[J]. Journal of Physical and Chemical Reference Data, 1974, 3(4): 897-935.
[14] HUANG Y G. A user-material subroutine incroporating single crystal plasticity in the ABAQUS finite element program[M]. Cambridge: Harvard Univ, 1991: 1-21.
[15] HUTCHINSON J W. Elastic-plastic behaviour of polycrystalline metals and composites[J]. Proceedings of the Royal Society of London Series A, Mathematical and Physical Sciences, 1970, 319(1537): 247-272.
[16] SKELTON R P. Energy criterion for high temperature low cycle fatigue failure[J]. Materials Science and Technology, 1991, 7(5): 427-440.
[17] XIE M W, CHEN G, YANG J, et al. Temperature and rate-dependent deformation behaviors of SAC305 solder using crystal plasticity model[J]. Mechanics of Materials, 2021, 157(6): 103834.
[18] LEI M Q, WANG Y X, YANG X F, et al. Microstructure evolution and mechanical behavior of copper through-silicon via structure under thermal cyclic loading[J]. Microelectronics Reliability, 2022, 136: 114730.
[19] YOU J H, MISKIEWICZ M. Material parameters of copper and CuCrZr alloy for cyclic plasticity at elevated temperatures[J]. Journal of Nuclear Materials, 2008, 373(1/2/3): 269-274.
[20] OMAIREY S L, DUNNING P D, SRIRAMULA S. Development of an ABAQUS plugin tool for periodic RVE homogenisation[J]. Engineering with Computers, 2019, 35(2): 567-577.
[21] SHIE K C, HSU P N, LI Y J, et al. Effect of bonding strength on electromigration failure in Cu-Cu bumps[J]. Materials, 2021, 14(21): 6394.
[22] HULL D, BACON D J. Introduction to Dislocations[M]. 5th ed. Amsterdam: Elsevier, 2011.
[23] CHOU T C, YANG K M, LI J C, et al. Investigation of pillar–concave structure for low-temperature Cu–Cu direct bonding in 3-D/2.5-D heterogeneous integration[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2020, 10(8): 1296-1303.
[24] MORROW J D. Cyclic plastic strain energy and fatigue of metals[J]. American Society for Testing and Materials. 1964: 45-87.
[25] NIU F F, WANG X B, YANG S H, et al. Low-temperature Cu/SiO2 hybrid bonding based on Ar/H2 plasma and citric acid cooperative activation for multi-functional chip integration[J]. Applied Surface Science, 2024, 648: 159074.

中国半导体行业协会封装分会会刊

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