BiCMOS与SOI工艺运算放大器的辐射敏感特性对比研究

doi:10.16257/j.cnki.1681-1070.2026.0025

电子与封装 ›› 2026, Vol. 26 ›› Issue (6): 060402 . doi: 10.16257/j.cnki.1681-1070.2026.0025

BiCMOS与SOI工艺运算放大器的辐射敏感特性对比研究

马毛旦¹，王忠芳^1,2，赵晓凡¹，张涛¹，丁宏宇¹，韩朝阳¹

1. 贵州振华风光半导体股份有限公司，贵阳 550014；2. 西安建筑科技大学信息与控制工程学院，西安 710311

收稿日期:2025-11-13 出版日期:2026-07-02 发布日期:2025-09-11
作者简介:马毛旦（1999—），男，河南驻马店人，硕士，助理工程师，主要研究方向为半导体集成电路辐射效应、抗辐射电路加固等。

Comparative Study on Radiation Sensitivity Characteristics of BiCMOS and SOI Process Operational Amplifiers

MA Maodan¹, WANG Zhongfang^1,2, ZHAO Xiaofan¹, ZHANG Tao¹, DING Hongyu¹, HAN Zhaoyang¹

1. Guizhou Zhenhua Fengguang Semiconductor Co., Ltd., Guiyang 550014, China; 2. Collegeof Information and Control Engineering, Xi'an University of Architecture and Technology, Xi'an 710311, China

Received:2025-11-13 Online:2026-07-02 Published:2025-09-11

摘要/Abstract

摘要： 针对运算放大器在辐射环境中的可靠性问题，基于脉冲激光单粒子效应试验平台与⁶⁰Co总剂量辐照试验平台，系统研究了BiCMOS与SOI 2种工艺运算放大器的辐射敏感特性。单粒子瞬态（SET）效应敏感性方面，BiCMOS工艺运放的输入级SET阈值约为0.17 nJ，其输出脉冲信号与载流子迁移机制相关；SOI工艺运放凭借互补差分结构使得输入级具有较高SET阈值（0.47 nJ），而其埋氧层导致中间级与输出级异常敏感。此外，BiCMOS运放中的米勒电容会引入低通滤波效应，导致SET脉冲展宽并伴随振荡。电离总剂量（TID）效应敏感性方面，BiCMOS工艺运放主要表现为双极晶体管增益衰退，开环增益退化显著（最大21.3 dB）；SOI工艺运放则因埋氧层电荷积累引发输入偏置电流急剧增加（最大120.4 nA），而增益退化相对较小。该研究揭示了BiCMOS与SOI工艺运放在SET与TID效应下的退化规律及物理机制，为空间及核环境用抗辐射集成电路的工艺选型与加固设计提供了重要试验依据。

关键词: 运算放大器, 单粒子瞬态效应, 敏感节点, 电离总剂量

Abstract: Focusing on the reliability issues of operational amplifiers in radiation environments, a systematic study is conducted on the radiation sensitivity characteristics of BiCMOS and SOI process operational amplifiers through pulsed laser single particle effect test platform and ⁶⁰Co total ionizing dose irradiation test platform. In terms of single event transient (SET) sensitivity: the input stage SET threshold of the BiCMOS process operational amplifier is about 0.17 nJ, and its output pulse signal is related to the carrier migration mechanism; the SOI process operational amplifier, with its complementary differential structure, has a high SET threshold (0.47 nJ) for the input stage, but its buried oxide layer causes abnormal sensitivity between the intermediate and output stages. In addition, the Miller capacitor in the BiCMOS operational amplifier introduces a low-pass filtering effect, resulting in SET pulse broadening and oscillation. In terms of total ionizing dose (TID) sensitivity: the BiCMOS process operational amplifier mainly exhibits bipolar transistor gain degradation and significant open-loop gain degradation (up to 21.3 dB); the SOI process operational amplifier experiences a sharp increase in input bias current (up to 120.4 nA) due to the accumulation of the buried oxide layer charges, while the gain degradation is relatively moderate. This study reveals the degradation laws and physical mechanisms of BiCMOS and SOI operational amplifiers under SET and TID effects, providing important experimental evidence for the process selection and hardening design of radiation-hardened integrated circuits intended for space and nuclear environments.

Key words: operational amplifier, single event transient effect, sensitive node, total ionizing dose

中图分类号:

TN722
TN432

马毛旦，王忠芳，赵晓凡，张涛，丁宏宇，韩朝阳. BiCMOS与SOI工艺运算放大器的辐射敏感特性对比研究[J]. 电子与封装, 2026, 26(6): 060402 .

MA Maodan, WANG Zhongfang, ZHAO Xiaofan, ZHANG Tao, DING Hongyu, HAN Zhaoyang. Comparative Study on Radiation Sensitivity Characteristics of BiCMOS and SOI Process Operational Amplifiers[J]. Electronics & Packaging, 2026, 26(6): 060402 .

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中国电子学会电子制造与封装技术分会会刊

中国半导体行业协会封测分会会刊

无锡市集成电路学会会刊

BiCMOS与SOI工艺运算放大器的辐射敏感特性对比研究

Comparative Study on Radiation Sensitivity Characteristics of BiCMOS and SOI Process Operational Amplifiers

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