SiC
MOSFET栅极驱动电路研究综述*

doi:10.16257/j.cnki.1681-1070.2022.0201

电子与封装 ›› 2022, Vol. 22 ›› Issue (2): 020101 . doi: 10.16257/j.cnki.1681-1070.2022.0201

所属专题：碳化硅功率半导体技术

• “碳化硅功率半导体技术”专题 • 上一篇下一篇

SiC MOSFET栅极驱动电路研究综述^*

周泽坤;曹建文;张志坚;张波

电子科技大学功率集成技术实验室，成都 ?610054

收稿日期:2021-09-26 出版日期:2022-02-23 发布日期:2021-11-24
作者简介:周泽坤（1984—），男，江苏盐城人，博士，教授，从事高性能功率集成电路与系统研究，包括电源管理集成技术、高精度低功耗模拟集成电路、高速低噪声模拟前端集成电路、高功率密度控制器、宽禁带半导体集成电路及能量收集系统等。

Review ofSilicon Carbide MOSFET Gate Drivers

ZHOU Zekun, CAO Jianwen, ZHANG Zhijian, ZHANG Bo

Power IntegratedTechnology Laboratory, University ofElectronic Science and Technology of China, Chengdu 610054, China

Received:2021-09-26 Online:2022-02-23 Published:2021-11-24

摘要/Abstract

摘要： 凭借碳化硅（SiC）材料具有宽禁带、高击穿电场、高电子饱和速率和高导热性等优点，SiC MOSFET广泛应用在高压、高频等大功率场合。传统基于硅（Si）MOSFET的驱动电路无法完全发挥SiC MOSFET的优异性能，针对SiC MOSFET的应用有必要采用合适的栅驱动设计技术。目前，已经有很多学者在该领域中有一定的研究基础，为SiC MOSFET驱动电路的设计提供了参考。对现有基于SiC MOSFET的PCB板级设计技术进行了详细说明，并从开关速度、电磁干扰噪声以及能量损耗等方面对其进行了总结和分析，给出了针对SiC MOSFET驱动电路的设计考虑和建议。

关键词: 电磁干扰噪声, 能量损耗, 栅驱动, 碳化硅MOSFET

Abstract: Since Silicon carbide (SiC) material has the advantages of wide band gap, high breakdown electric field, high electron saturation rate and high thermal conductivity, SiC MOSFET is widely used in high-power occasions such as high voltage and high frequency. However, the conventional gate drivers for silicon (Si) MOSFET cannot completely exhibit the excellent performance of SiC MOSFET. Therefore, it is very necessary to use appropriate gate driver design techniques for SiC MOSFET. Currently, many scholars have proposed some research results in this field, which provides the reference for designs of SiC MOSFET driving circuit. Current gate driver design techniques are reviewed. Furthermore, these design techniques are summarized and analyzed from switching speed, electro-magnetic interference noise, and energy loss. Finally, the design considerations and suggestions of SiC MOSFET gate drivers are given.

Key words: electro-magneticinterferencenoise, energyloss, gatedriver, siliconcarbideMOSFET

中图分类号:

TN433

周泽坤, 曹建文, 张志坚, 张波. SiC MOSFET栅极驱动电路研究综述^*[J]. 电子与封装, 2022, 22(2): 020101 .

ZHOU Zekun, CAO Jianwen, ZHANG Zhijian, ZHANG Bo. Review ofSilicon Carbide MOSFET Gate Drivers[J]. Electronics & Packaging, 2022, 22(2): 020101 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

SiC MOSFET栅极驱动电路研究综述^*

Review ofSilicon Carbide MOSFET Gate Drivers

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

SiC MOSFET栅极驱动电路研究综述*

Review ofSilicon Carbide MOSFET Gate Drivers

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SiC MOSFET栅极驱动电路研究综述^*