宽带射频垂直过渡结构的设计

doi:10.16257/j.cnki.1681-1070.2023.0142

电子与封装 ›› 2023, Vol. 23 ›› Issue (10): 100303 . doi: 10.16257/j.cnki.1681-1070.2023.0142

宽带射频垂直过渡结构的设计

伊雅新,杨睿天,辜霄,李庆东,孙科,杨秀强

成都西科微波通讯有限公司，成都 610091

收稿日期:2023-04-05 出版日期:2023-10-31 发布日期:2023-10-31
作者简介:伊雅新（1996—），女，内蒙古呼伦贝尔人，硕士，工程师，主要研究方向为射频电路及微波集成组件等。

Design of Wideband RF Vertical Transition Structure

YI Yaxin, YANG Ruitian, GU Xiao, LI Qingdong, SUN Ke, YANG Xiuqiang

Chengdu Seekon Microwave Communication Co., Ltd., Chengdu 610091, China

Received:2023-04-05 Online:2023-10-31 Published:2023-10-31

摘要/Abstract

摘要： 针对多层毫米波的射频传输问题，设计了一种宽带射频垂直过渡结构。通过调节微带线枝节与绝缘子之间的匹配关系，使射频信号在多层介质基板中实现低损耗、宽频带的传输。利用三维电磁仿真软件对该过渡结构进行了建模仿真，实物加工和测试结果表明，在DC至40GHz的频带范围内回波损耗低于-8 dB，插入损耗大于-2.2 dB（包含了接头损耗及加工误差）。

关键词: 垂直过渡结构, 低损耗, 微带线

Abstract: A wideband RF vertical transition structure is designed for the RF transmission problem of multilayer millimeter waves.By adjusting the matching relationship between the microstrip wire branches and insulators, the RF signal can be transmitted in multilayer dielectric substrate with low loss and wideband.The 3D electromagnetic simulation software is used to model and simulate the transition structure, and the physical processing and testing results show that the return loss is less than -8 dB and the insertion loss is greater than -2.2 dB in the frequency band fromDC to 40 GHz.

Key words: vertical transition structure, low loss, microstrip wire

中图分类号:

TN402

伊雅新,杨睿天,辜霄,李庆东,孙科,杨秀强. 宽带射频垂直过渡结构的设计[J]. 电子与封装, 2023, 23(10): 100303 .

YI Yaxin, YANG Ruitian, GU Xiao, LI Qingdong, SUN Ke, YANG Xiuqiang. Design of Wideband RF Vertical Transition Structure[J]. Electronics & Packaging, 2023, 23(10): 100303 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

宽带射频垂直过渡结构的设计

Design of Wideband RF Vertical Transition Structure

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