中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2021, Vol. 21 ›› Issue (1): 010302 . doi: 10.16257/j.cnki.1681-1070.2021.0106

• 电路设计 • 上一篇    下一篇

一种基于Brokaw带隙基准上电复位电路的设计

宋爱武1,李富华1,黄祥林2,孙波2   

  1. 1.苏州大学, 江苏 苏州 215000;2.坤元微电子有限公司,江苏 苏州215000
  • 收稿日期:2020-07-25 出版日期:2021-01-20 发布日期:2020-09-01
  • 作者简介:宋爱武(1996—),男,江苏盐城人 ,硕士研究生,研究方向为模拟集成电路的设计与分析。

Design of Power-on Reset Circuit Based onBrokaw Bandgap Reference

SONG Aiwu1, LI Fuhua1, HUANG Xianglin2, SUN Bo2   

  1. 1.Soochow University, Suzhou 215000,China;
  • Received:2020-07-25 Online:2021-01-20 Published:2020-09-01

摘要: 为了解决传统上电复位电路电源阈值电压受工艺和温度的影响,提出了以Brokaw带隙基准源为基础结构,由采样电路、电流比较电路和电平转换电路等模块组成的可实现精确复位的上电复位电路。增加带迟滞功能的设计,减小了电源噪声对输出电路的影响。采用0.5 μm CMOS工艺并对电路进行仿真。结果显示该电路工作在5 V电源电压,典型工艺和温度下电源阈值为3.19 V,在不同的工艺和温度下对电源阈值的影响较小,误差范围在0.31%~4.7%。

关键词: 上电复位电路, Brokaw带隙基准, 电流比较电路, 迟滞

Abstract: In order to solve the traditional influence of process and temperature on the threshold voltage of the power supply in the power-on reset circuit, an power-on reset circuit is proposed, which is composed of sampling circuit, current comparison circuit and level shift circuit, and it can accurately judge the reset. The design with hysteresis is added to reduce the influence of power noise on output circuit. The POR circuit was simulated based on 0.5 μm CMOS process. The results show that the circuit works at 5 V supply voltage, the power threshold is 3.19 V under typical process and temperature, and the influence of different process and temperature on power threshold is small, and the error range is 0.31% - 4.7%.

Key words: power-onresetcircuit, Brokawbandgap, currentcomparisoncircuit, hysteresis

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