一种低电磁干扰的高边驱动电路*

doi:10.16257/j.cnki.1681-1070.2022.0612

电子与封装 ›› 2022, Vol. 22 ›› Issue (6): 060303 . doi: 10.16257/j.cnki.1681-1070.2022.0612

一种低电磁干扰的高边驱动电路^*

赵皆辉^1,2;刘兴辉¹;阮昊²;霍建龙²;张治东^1,2;赵宏亮¹

1. 辽宁大学物理学院，沈阳 ?110000；2. 江苏集萃智能集成电路设计技术研究所有限公司，江苏无锡 214000

收稿日期:2021-11-15 出版日期:2022-06-23 发布日期:2022-03-02
作者简介:赵皆辉（1995—），男，河北张家口人，硕士，研究方向为模拟集成电路设计。

A High-Side Driver Circuit with Low Electromagnetic Interference

ZHAO Jiehui^1,2, LIU Xinghui¹, RUAN Hao², HUO Jianlong², ZHANG Zhidong^1,2, ZHAO Hongliang¹

1. School of Physics,Liaoning University, Shenyang 110000, China; 2. Jiangsu JicuiIntelligent Integrated Circuit Design Technology Research Institute Co.,Ltd., Wuxi 214000, China

Received:2021-11-15 Online:2022-06-23 Published:2022-03-02

摘要/Abstract

摘要： 提出了一种低电磁干扰（Electromagnetic Interference，EMI）的高边驱动电路。针对传统设计中存在的振荡器工作过程中产生的高电压或电流尖峰引起严重EMI以及宽电压范围下MOSFET栅击穿等问题，提出了一种新的系统方案及电路结构，同时从傅氏级数及空间交变电磁场两个方面解释了抖频技术如何抑制EMI。基于Hynix 0.18 μm BCD工艺进行设计与仿真，仿真结果表明，在5 MHz的振荡器频率下抖频后的各奇次谐波频带均被展宽，在三次谐波处降幅高达12.3 dB，极大改善了系统的电磁兼容性，同时电路可以在电源电压为4.5~37 V的范围内正常工作。该设计方案可以广泛用于高压集成电路设计领域。

关键词: 抖频, 高边驱动, EMI抑制, 电源电压

Abstract: A high-side driver circuit with low electromagnetic interference (EMI) is presented. In order to optimize serious EMI caused by the high voltage or current spike and MOSFET gate breakdown in a wide power supply range in the process of oscillator operation for the traditional design, a new solution and a circuit structure are proposed. At the same time, how the jitter frequency technology can suppress EMI is explained from two aspects of Fourier series and spatial alternating electromagnetic field. Based on Hynix 0.18 μm BCD process to design and simulate, the simulation results show that the odd harmonic bands are widened at the 5 MHz oscillator center frequency, the decrease is up to 12.3 dB at the third harmonic, which greatly improves the electromagnetic compatibility of the oscillator. Furthermore, the circuit can work normally in the range of 3.7-45 V power supply voltage. The system design can be widely used in the field of high voltage IC design.

Key words: frequencyjitter, high-sidedriver, EMIsuppression, supplyvoltage

中图分类号:

TN433

赵皆辉;刘兴辉;阮昊;霍建龙;张治东;赵宏亮. 一种低电磁干扰的高边驱动电路^*[J]. 电子与封装, 2022, 22(6): 060303 .

ZHAO Jiehui, LIU Xinghui, RUAN Hao, HUO Jianlong, ZHANG Zhidong, ZHAO Hongliang. A High-Side Driver Circuit with Low Electromagnetic Interference[J]. Electronics & Packaging, 2022, 22(6): 060303 .

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一种低电磁干扰的高边驱动电路^*

A High-Side Driver Circuit with Low Electromagnetic Interference

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