关键词: 大功率LED, 死灯, 暗亮, 失效分析, SiO₂保护层

Abstract: The failure phenomenon of damage and dim lights in high-power LED project-light lamp are confirmed through failure reproduction，the failure modes of damage and dim LED chips are mainly manifested as open and leakage by testing the semiconductor characteristics of abnormal LED chips. During the appearance inspection of the open and leakage lamp beads, blackening abnormalities are found on the same side of the die surface position, which indicating a possible burning phenomenon on the surface of the die. After decapping test, there are abnormal electrode breakdown, burning and pull off at the cathode position on the surface of the open lamp bead die, same abnormal electrode breakdown and burning are found at the finger position of the leakage lamp bead die surface, The FIB and CP-SEM analysis of the surface of the normal LED on the failure board show that the disconnection of the open LED cathode and the breakdown and burning of the leakage LED finger position are mainly caused by interface void defects at the cathode position and the lack of SiO₂ protective layer around the finger and cathode position.

Key words: high-power LED, damage light, dim light, failure analysis, SiO₂ protective layer